4.5.2. Mid-IR QCLs

InGaAs/AlInAs

• Mid-IR QCL - Yu Slivken Razeghi

  Injector doping level-dependent continuous-wave operation of InP-based QCLs at \(\lambda = 7.3 \mu m\) above room temperature

  J. S. Yu, S. Slivken, M. Razeghi

  Semiconductor Science and Technology 25, 125015 (2010)

GaAs/AlGaAs

• 300 K operation of a GaAs-based quantum-cascade laser at \(\lambda\simeq 9 \mu m\)

  H. Page, C. Becker, A. Robertson, G. Glastre, V. Ortiz, C. Sirtori

  Applied Physics Letters 78, 3529 (2001)