Journal Papers

  • [Andrews2008]
    A. M. Andrews, A. Benz, C. Deutsch, G. Fasching, K. Unterrainer, P. Klang, W. Schrenk, G. Strasser
    Doping dependence of LO-phonon depletion scheme THz quantum-cascade lasers
    Materials Science and Engineering B 147, 152 (2008)
  • [BelyakovBurdov2008]
    Anomalous splitting of the hole states in silicon quantum dots with shallow acceptors
    V. A. Belyakov, V. A. Burdov
    J. Phys. Condens.: Matter 20, 025213 (2008)
  • [Burdov2002]
    Electron and hole spectra of silicon quantum dots
    V. A. Burdov
    JETP 94, 411 (2002)
  • [Dehlinger2000]
    G. Dehlinger, L. Diehl, U. Gennser, H. Sigg, J. Faist, K. Ensslin, D. Grützmacher, E. Müller
    Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures
    Science 290, 2277 (2000)
  • [FerreiraBastard1989]
    R. Ferreira, G. Bastard
    Evaluation of some scattering times for electrons in unbiased and biased single- and multiple-quantum-well structures
    Physical Review B 40 (2), 1074 (1989)
  • [FranceschiJancuBeltram1999]
    S. De Franceschi, J.-M. Jancu, F. Beltram
    Boundary conditions in multiband k.p models: A tight-binding test
    Physical Review B 59 (15), 9691 (1999)
  • [Friedrich2005]
    A. Friedrich, G. Böhm, M.C. Amann, G. Scarpa
    Quantum-cascade lasers without injector regions operating above room temperature
    Applied Physics Letters 86, 161114 (2005)
  • [Hu2005]
    Q. Hu, B.S. Williams, S. Kumar, H. Callebaut, S. Kohen, J.L. Reno
    Resonant-phonon-assisted THz quantum-cascade lasers with metal-metal waveguides
    Semiconductor Science and Technology 20, S228 (2005)
  • [Holleitner2007]
    A.W. Holleitner, V. Sih, R.C. Myers, A.C. Gossard, D.D. Awschalom
    Dimensionally constrained D’yakonov–Perel’ spin relaxation in n-InGaAs channels: transition from 2D to 1D
    New Journal of Physics 9, 342 (2007)
  • [Jogai2003]
    Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors
    J. Appl. Phys. 93, 1631 (2003)
  • [Jeon1996]
    J.-B. Jeon, Yu.M. Sirenko, K.W. Kim, M.A. Littlejohn, M.A. Stroscio
    Valence band parameters of wurtzite materials
    Solid State Communications 99, 423 (1996)
  • [KubisNEGF2005]
    T. Kubis, A. Trellakis, and P. Vogl
    Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, M. Saraniti and U. Ravaioli, eds., Chicago, USA, July 25-19, 2005, Springer Proceedings in Physics, Vol. 110, 369–372 (2005)
    DOI 10.1007/978-3-540-36588-4_84
  • [KumagaiChuangAndoPRB1998]
    M. Kumagai, S. L. Chuang, H. Ando
    Analytical solutions of the block-diagonalized Hamiltonian for strained wurtzite semiconductors
    Phys. Rev. B 57, 15303 (1998).
  • [Page2001]
    H. Page, C. Becker, A. Robertson, G. Glastre, V. Ortiz, C. Sirtori
    300 K operation of a GaAs-based quantum-cascade laser at lambda=9 µm
    Applied Physics Letters 78 (22), 3529 (2001)
    doi: 10.1063/1.1374520
  • [ParkChuangPRB1999]
    S.-H. Park, S.-L. Chuang
    Crystal-orientation effects on the piezoelectric field and electronic properties of strained wurtzite semiconductors
    Phys. Rev. B 59, 4725 (1999).
  • [ParkChuang2000]
    S.-H. Park, S.L. Chuang
    Comparison of zinc-blende and wurtzite GaN semiconductors with spontaneous polarization and piezoelectric field effects
    J. Appl. Phys. 87, 353 (2000)
  • [Park2000]
    S.-H. Park
    Crystal Orientation Effects on Electronic Properties of Wurtzite GaN/AlGaN Quantum Wells with Spontaneous and Piezoelectric Polarization
    J. Appl. Phys. 39, 3478 (2000)
  • [Pryor1998]
    C. Pryor
    Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations
    Physical Review B 57 (12), 7190 (1998)
  • [Rochat2005]
    M. Rochat, L. Ajili, H. Willenberg, J. Faist, H. Beere, G. Davies, E. Linfield, D. Ritchie
    Low-threshold terahertz quantum-cascade lasers
    Applied Physics Letters 81 (8), 1381 (2002)
  • [Scholze2000]
    A. Scholze, A. Schenk, W. Fichtner
    Single-Electron Device Simulation
    IEEE Transactions on Electron Devices 47, 1811 (2000)
  • [Sirtori1998]
    C. Sirtori, P. Kruck, S. Barbieri, P. Collot, J. Nagle, M. Beck, J. Faist, U. Oesterle
    GaAs/AlGaAs quantum cascade lasers
    Applied Physics Letters 73 (24), 3486 (1998)
  • [F. Schäffler]
    F. Schäffler
    High-Mobility Si and Ge structures
    Semiconductor Science and Technology 12, 1515 (1997)
  • [ZakharovaPR2001]
    Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells
    A. Zakharova, S. T. Yen, K. A. Chao
    Physical Review B 64, 235332 (2001)
  • [HalvorsenPR2000]
    Optical transitions in broken gap heterostructures
    E. Halvorsen, Y. Galperin, K. A. Chao
    Physical Review B 61, 16743 (2000)
  • [CardonaPR1966]
    Energy-band structure of Germanium and Silicon: The k.p method
    M. Cardona, F. H. Pollak
    Physical Review Vol. 142, No. 2, pp. 530-543 (1996)
    doi: 10.1103/PhysRev.142.530
  • [RideauPRB2006]
    Strained Si, Ge, and Si(1-x)Ge(x) alloys modelled with a first-principles-optimized full-zone k.p method
    D. Rideau, M. Feraille, L. Ciampolini, M. Minondo, C. Tavernier, H. Jaouen, A. Ghetti
    Physical Review B Vol. 74, No. 19, 195208 (2006)
    doi: 10.1103/PhysRevB.74.195208
  • [MasettiIEEE1983]
    Modeling of Carrier Mobility Against Carrier Concentration in Arsenic-, Phosphorus- and Boron-Doped Silicon
    G. Masetti, M. Severi, S. Solmi
    IEEE Trans. Electron Devices, Vol. ED-30 (7), 764 (1983)
    doi: 10.1109/T-ED.1983.21207
  • [Arora1982]
    Electron and hole mobilities in silicon as a function of concentration and temperature
    N.D. Arora, J.R. Hauser, D.J. Roulston
    IEEE Trans. Electron Devices, ED-29, 292, (1982)
    doi: 10.1109/T-ED.1982.20698
  • [CaugheyThomas1967]
    D. Caughey, R. Thomas
    Carrier Mobilities in Silicon Empirically Related to Doping and Field
    Proc. IEEE 55, 2192 (1967)
    doi: 10.1109/PROC.1967.6123
  • [Jiang1988]
    D. S. Jiang, H. Jung, K. Ploog
    Temperature dependence of photoluminescence from GaAs single and multiple quantumwell heterostructures grown by molecularbeam epitaxy
    J. Appl. Phys. 64, 1371 (1988)
    doi: 10.1063/1.341862
  • [Zhao2021]
    X. Zhao, G. Wang , H. Lin, Y. Du, X. Luo, Z. Kong, J. Su, J. Li , W. Xiong. Y. Miao, H. Li, G. Guo, H. H. Radamson
    High Performance p-i-n Photodetectors on Ge-on-Insulator Platform
    Nanomaterials 11, 1125 (2021)
  • [ZhangXia2006]
    X. W. Zhang, J. B. Xia
    Optical properties of GaN wurtzite quantum wires
    J. Phys.: Condens. Matter 18, 3107 (2006)