Journal Papers

  • [Andrews2008]
    A. M. Andrews, A. Benz, C. Deutsch, G. Fasching, K. Unterrainer, P. Klang, W. Schrenk, G. Strasser
    Doping dependence of LO-phonon depletion scheme THz quantum-cascade lasers
    Materials Science and Engineering B 147, 152 (2008)
  • [BelyakovBurdov2008]
    Anomalous splitting of the hole states in silicon quantum dots with shallow acceptors
    V. A. Belyakov, V. A. Burdov
    J. Phys. Condens.: Matter 20, 025213 (2008)
  • [Burdov2002]
    Electron and hole spectra of silicon quantum dots
    V. A. Burdov
    JETP 94, 411 (2002)
  • [Canali1975]
    Electron and Hole Drift Velocity Measurements in Silicon and Their Empirical Relation to Electric Field and Temperature
    C. Canali, G. Majni, R. Minder, and G. Otaviani
    IEEE Transactions on Electron Devices, vol. ED-22, no. 11, pp. 1045-1047 (1975)
  • [Dehlinger2000]
    G. Dehlinger, L. Diehl, U. Gennser, H. Sigg, J. Faist, K. Ensslin, D. Grützmacher, E. Müller
    Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures
    Science 290, 2277 (2000)
  • [FerreiraBastard1989]
    R. Ferreira, G. Bastard
    Evaluation of some scattering times for electrons in unbiased and biased single- and multiple-quantum-well structures
    Physical Review B 40 (2), 1074 (1989)
  • [FranceschiJancuBeltram1999]
    S. De Franceschi, J.-M. Jancu, F. Beltram
    Boundary conditions in multiband k.p models: A tight-binding test
    Physical Review B 59 (15), 9691 (1999)
  • [Friedrich2005]
    A. Friedrich, G. Böhm, M.C. Amann, G. Scarpa
    Quantum-cascade lasers without injector regions operating above room temperature
    Applied Physics Letters 86, 161114 (2005)
  • [Hänsch1986]
    W. Hänch and M. Miura-Mattausch
    The hotelectron problem in small semiconductor devices<>
    J. Appl. Phys 60, 650 (1986)
  • [Hu2005]
    Q. Hu, B.S. Williams, S. Kumar, H. Callebaut, S. Kohen, J.L. Reno
    Resonant-phonon-assisted THz quantum-cascade lasers with metal-metal waveguides
    Semiconductor Science and Technology 20, S228 (2005)
  • [Holleitner2007]
    A.W. Holleitner, V. Sih, R.C. Myers, A.C. Gossard, D.D. Awschalom
    Dimensionally constrained D’yakonov-Perel’ spin relaxation in n-InGaAs channels: transition from 2D to 1D
    New Journal of Physics 9, 342 (2007)
  • [Jogai2003]
    Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors
    J. Appl. Phys. 93, 1631 (2003)
  • [Jeon1996]
    J.-B. Jeon, Yu.M. Sirenko, K.W. Kim, M.A. Littlejohn, M.A. Stroscio
    Valence band parameters of wurtzite materials
    Solid State Communications 99, 423 (1996)
  • [KubisNEGF2005]
    T. Kubis, A. Trellakis, and P. Vogl
    Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, M. Saraniti and U. Ravaioli, eds., Chicago, USA, July 25-19, 2005, Springer Proceedings in Physics, Vol. 110, 369–372 (2005)
    DOI 10.1007/978-3-540-36588-4_84
  • [KumagaiChuangAndoPRB1998]
    M. Kumagai, S. L. Chuang, H. Ando
    Analytical solutions of the block-diagonalized Hamiltonian for strained wurtzite semiconductors
    Phys. Rev. B 57, 15303 (1998).
  • [Lazarenkova2001]
    Miniband formation in a quantum dot crystal
    O. L. Lazarenkova and A. A. Balandin
    Journal of Applied Physics 89, 5509 (2001)
    DOI 10.1063/1.1366662
  • [Page2001]
    H. Page, C. Becker, A. Robertson, G. Glastre, V. Ortiz, C. Sirtori
    300 K operation of a GaAs-based quantum-cascade laser at lambda=9 µm
    Applied Physics Letters 78 (22), 3529 (2001)
    doi: 10.1063/1.1374520
  • [ParkChuangPRB1999]
    S.-H. Park, S.-L. Chuang
    Crystal-orientation effects on the piezoelectric field and electronic properties of strained wurtzite semiconductors
    Phys. Rev. B 59, 4725 (1999).
  • [ParkChuang2000]
    S.-H. Park, S.L. Chuang
    Comparison of zinc-blende and wurtzite GaN semiconductors with spontaneous polarization and piezoelectric field effects
    J. Appl. Phys. 87, 353 (2000)
  • [Park2000]
    S.-H. Park
    Crystal Orientation Effects on Electronic Properties of Wurtzite GaN/AlGaN Quantum Wells with Spontaneous and Piezoelectric Polarization
    J. Appl. Phys. 39, 3478 (2000)
  • [Pryor1998]
    C. Pryor
    Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations
    Physical Review B 57 (12), 7190 (1998)
  • [Rochat2005]
    M. Rochat, L. Ajili, H. Willenberg, J. Faist, H. Beere, G. Davies, E. Linfield, D. Ritchie
    Low-threshold terahertz quantum-cascade lasers
    Applied Physics Letters 81 (8), 1381 (2002)
  • [Scholze2000]
    A. Scholze, A. Schenk, W. Fichtner
    Single-Electron Device Simulation
    IEEE Transactions on Electron Devices 47, 1811 (2000)
  • [Schwierz2010]
    N. Schwierz, D. Horinek, R. R. Netz
    Reversed Anionic Hofmeister Series: The Interplay of Surface Charge and Surface Polarity
    Langmuir 26, 7370 (2010)
  • [Sirtori1998]
    C. Sirtori, P. Kruck, S. Barbieri, P. Collot, J. Nagle, M. Beck, J. Faist, U. Oesterle
    GaAs/AlGaAs quantum cascade lasers
    Applied Physics Letters 73 (24), 3486 (1998)
  • [F. Schäffler]
    F. Schäffler
    High-Mobility Si and Ge structures
    Semiconductor Science and Technology 12, 1515 (1997)
  • [ZakharovaPR2001]
    Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells
    A. Zakharova, S. T. Yen, K. A. Chao
    Physical Review B 64, 235332 (2001)
  • [HalvorsenPR2000]
    Optical transitions in broken gap heterostructures
    E. Halvorsen, Y. Galperin, K. A. Chao
    Physical Review B 61, 16743 (2000)
  • [CardonaPR1966]
    Energy-band structure of Germanium and Silicon: The k.p method
    M. Cardona, F. H. Pollak
    Physical Review Vol. 142, No. 2, pp. 530-543 (1996)
    doi: 10.1103/PhysRev.142.530
  • [RideauPRB2006]
    Strained Si, Ge, and Si(1-x)Ge(x) alloys modelled with a first-principles-optimized full-zone k.p method
    D. Rideau, M. Feraille, L. Ciampolini, M. Minondo, C. Tavernier, H. Jaouen, A. Ghetti
    Physical Review B Vol. 74, No. 19, 195208 (2006)
    doi: 10.1103/PhysRevB.74.195208
  • [MasettiIEEE1983]
    Modeling of Carrier Mobility Against Carrier Concentration in Arsenic-, Phosphorus- and Boron-Doped Silicon
    G. Masetti, M. Severi, S. Solmi
    IEEE Trans. Electron Devices, Vol. ED-30 (7), 764 (1983)
    doi: 10.1109/T-ED.1983.21207
  • [Arora1982]
    Electron and hole mobilities in silicon as a function of concentration and temperature
    N.D. Arora, J.R. Hauser, D.J. Roulston
    IEEE Trans. Electron Devices, ED-29, 292, (1982)
    doi: 10.1109/T-ED.1982.20698
  • [CaugheyThomas1967]
    D. Caughey, R. Thomas
    Carrier Mobilities in Silicon Empirically Related to Doping and Field
    Proc. IEEE 55, 2192 (1967)
    doi: 10.1109/PROC.1967.6123
  • [Jiang1988]
    D. S. Jiang, H. Jung, K. Ploog
    Temperature dependence of photoluminescence from GaAs single and multiple quantumwell heterostructures grown by molecularbeam epitaxy
    J. Appl. Phys. 64, 1371 (1988)
    doi: 10.1063/1.341862
  • [Zhao2021]
    X. Zhao, G. Wang , H. Lin, Y. Du, X. Luo, Z. Kong, J. Su, J. Li , W. Xiong. Y. Miao, H. Li, G. Guo, H. H. Radamson
    High Performance p-i-n Photodetectors on Ge-on-Insulator Platform
    Nanomaterials 11, 1125 (2021)
  • [ZhangXia2006]
    X. W. Zhang, J. B. Xia
    Optical properties of GaN wurtzite quantum wires
    J. Phys.: Condens. Matter 18, 3107 (2006)