Journal Papers

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  A. M. Andrews, A. Benz, C. Deutsch, G. Fasching, K. Unterrainer, P. Klang, W. Schrenk, G. Strasser

  Doping dependence of LO-phonon depletion scheme THz quantum-cascade lasers

  Materials Science and Engineering B 147, 152 (2008)

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  A. D. Andreev, E. P. O’Reilly

  Theory of the electronic structure of GaN/AlN hexagonal quantum dots

  Phys. Rev. B 62, 15851 (2000)

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  Electron and hole mobilities in silicon as a function of concentration and temperature

  N.D. Arora, J.R. Hauser, D.J. Roulston

  IEEE Trans. Electron Devices, ED-29, 292, (1982)

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  Eight-band kp model of strained zinc blende crystals

  Thomas B. Bahder

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  Exciton binding energy in quantum wells

  G. Bastard, E. E. Mendez, L. L. Chang, and L. Esaki

  Physical Review B, 26, 1974 (1982)

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  A Macintosh Hypercard stack for calculation of thermodynamically-corrected buffer recipes

  R. J. Beynon

  Comput. Appl. Biosci. 4 (4), 487 (1988)

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  Buffer solutions: The basics

  R. J. Beynon, and J. S. Easterby

  Oxford University Press (1996)

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  Simulation of quantum cascade lasers - optimizing laser performance

  S. Birner, T. Kubis, and P. Vogl

  Photonik international 2, 60 (2008)

• [BirnerPhotonik2008]

  Simulation zur Optimierung von Quantenkaskadenlasern

  S. Birner, T. Kubis, and P. Vogl

  Photonik 1, 44 (2008)

• [BirnerAPhys2006]

  Modeling of Semiconductor Nanostructures with nextnano3

  S. Birner, S. Hackenbuchner, M. Sabathil, G. Zandler, J.A. Majewski, T. Andlauer, T. Zibold, R. Morschl, A. Trellakis, P. Vogl

  Acta Physica Polonica A 110 (2), 111 (2006)

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  Ballistic Quantum Transport using the Contact Block Reduction (CBR) Method - An introduction

  S. Birner, C. Schindler, P. Greck, M. Sabathil, and P. Vogl

  Journal of Computational Electronics 8, 267–286 (2009)

  DOI 10.1007/s10825-009-0293-z

• [Biscani2020]

  A parallel global multiobjective framework for optimization: pagmo

  F. Biscani, D. Izzo

  Journal of Open Source Software, 5(53), 2338 (2020)

  DOI 10.21105/joss.02338

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  Anomalous splitting of the hole states in silicon quantum dots with shallow acceptors

  V. A. Belyakov, V. A. Burdov

  J. Phys. Condens.: Matter 20, 025213 (2008)

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  Electron and hole spectra of silicon quantum dots

  V. A. Burdov

  JETP 94, 411 (2002)

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  Electron and Hole Drift Velocity Measurements in Silicon and Their Empirical Relation to Electric Field and Temperature

  C. Canali, G. Majni, R. Minder, and G. Otaviani

  IEEE Transactions on Electron Devices, vol. ED-22, no. 11, pp. 1045-1047 (1975)

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  Resonant Tunneling Through Double Barriers, Perpendicular Quantum Transport Phenomena in Superlattices, and Their Device Applications

  F. Capasso, K. Mohammed, and A. Y. Cho

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  Energy-band structure of Germanium and Silicon: The k.p method

  M. Cardona, F. H. Pollak

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  Microscopic theory of nanostructured semiconductor devices: beyond the envelope=function approximation

  A. D. Carlo

  Semiconductor Science and Technology, 18(1), R1-31

  doi: 10.1088/0268-1242/18/1/201

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  Carrier Mobilities in Silicon Empirically Related to Doping and Field

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  Unveiling the charge distribution of a GaAs-based nanoelectronic device: A large experimental dataset approach

  E. Chatzikyriakou, J. Wang, L. Mazzella, A. Lacerda-Santos, M. C. da S. Figueira, A. Trellakis, S. Birner, T. Grange, C. Bäuerle, and X. Waintal

  Phys. Rev. Research 4, 043163, December (2022)

  DOI 10.1103/PhysRevResearch.4.043163

• [Chilleri2021]

  An improved empirical model for a semiconductor’s velocity-field characteristic applied to gallium arsenide

  J. Chilleri, Y. Wang, M. S. Shur, and S. K. O’Leary

  Solid State Communications 330, 114240, (2021)

  doi: 10.1016/j.ssc.2021.114240

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  S. L. Chuang and C. S. Chang

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  Optical gain of strained wurtzite GaN quantum-well lasers

  S. L. Chuang

  IEEE Journal of Quantum Electronics, vol. 32, no. 10, pp. 1791-1800, October (1996)

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  An Improved Electron and Hole Mobility Model for General Purpose Device Simulation

  M. N. Darwish, J. L. Lentz, M. R. Pinto, P. M. Zeitzoff, T. J. Krutsick, and H. H. Vuong

  IEEE Transactions on Electron Devices 44, 1529 (1997)

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  G. Dehlinger, L. Diehl, U. Gennser, H. Sigg, J. Faist, K. Ensslin, D. Grützmacher, E. Müller

  Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures

  Science 290, 2277 (2000)

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  Theoretical estimation of tunnel currents in hetero-junctions: The special case of nitride tunnel junctions

  J-Y. Duboz and B. Vinter

  J. Appl. Phys. 126, 174501 (2019)

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  Semiconductor-based electron flying qubits: review on recent progress accelerated by numerical modelling

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  Monte Carlo Simulation of Electron Transport in the III-Nitride Wurtzite Phase Materials System: Binaries and Ternaries

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  IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 3, MARCH 2001

  DOI 10.1109/16.906448

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  Terahertz quantum cascade lasers operating up to ~200 K with optimized oscillator strength and improved injection tunneling

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  Optics Express 20, 3866 (2012)

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  Brazilian Journal of Physics 36, 438 (2006)

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  Six-band k”p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness

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  Quantum-cascade lasers without injector regions operating above room temperature

  Applied Physics Letters 86, 161114 (2005)

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  Efficient Method for the Calculation of Dissipative Quantum Transport in Quantum Cascade Lasers

  P. Greck, S. Birner, B. Huber, and P. Vogl

  Optics Express 23, 6587–6600 (2015)

  DOI 10.1364/OE.23.006587

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  The nonequilibrium Green’s functions method and descendants: ways to avoid and to go

  P. Greck, C. Schindler, T. Kubis, and P. Vogl

  Abstracts of 14^th International Workshop on Computational Electronics (IWCE), Pisa, Italy, 145 (2010)

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  Resonant-phonon-assisted THz quantum-cascade lasers with metal-metal waveguides

  Semiconductor Science and Technology 20, S228 (2005)

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  Dimensionally constrained D’yakonov-Perel’ spin relaxation in n-InGaAs channels: transition from 2D to 1D

  New Journal of Physics 9, 342 (2007)

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• [Kriekouki2022]

  Interpretation of 28 nm FD-SOI quantum dot transport data taken at 1.4 K using 3D quantum TCAD simulations

  I. Kriekouki, F. Beaudoin, P. Philippopoulos, C. Zhou, J. Camirand-Lemyre, S. Rochette, S. Mir, M.J. Barragan, M- Pioro-Ladriere, P. Galy

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  Few-electron quantum dots

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  Self-consistent quantum transport theory of carrier capture in heterostructures

  T. Kubis, A. Trellakis, and P. Vogl

  Proceedings of the 14^th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, M. Saraniti and U. Ravaioli, eds., Chicago, USA, July 25-19, 2005, Springer Proceedings in Physics, Vol. 110, 369–372 (2005)

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  Strong quantum-confined Stark effect in germanium quantum-well structures on silicon

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  Design of Ge–SiGe Quantum-Confined Stark Effect Electroabsorption Heterostructures for CMOS Compatible Photonics

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  Efficient method for the calculation of ballistic quantum transport

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  Vertically coupled quantum wires in a longitudinal magnetic field

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  H. Page, C. Becker, A. Robertson, G. Glastre, V. Ortiz, C. Sirtori

  300 K operation of a GaAs-based quantum-cascade laser at lambda=9 µm

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  Strained Si, Ge, and Si(1-x)Ge(x) alloys modelled with a first-principles-optimized full-zone k.p method

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  High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

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