2.2. Applications¶
This page lists all our benchmarks, tutorials, and pages describing models relevant for specific applications. Some sites may be found in more than one category as our examples are often quite general.
2.2.1. General¶
2.2.2. Solar Cells¶
2.2.3. Laser Diodes & LEDs¶
1D - Optics: Optical gain of InGaAs quantum wells with different strain
1D - Optics: Optical gain and spontaneous emission rate of strained GaN quantum well
1D - Optical interband transitions in a quantum well - Matrix elements and selection rules
1D - UV LED: Quantitative evaluation of the effectiveness of EBL
1D - UV LED: Quantitative evaluation of the effectiveness of superlattice structure in p-region
2.2.4. Photodetectors¶
1D - InAs / GaSb broken gap quantum well (BGQW) (type-II band alignment)
1D - Optical intraband transitions in a quantum well - Intraband matrix elements and selection rules
1D - Optical interband transitions in a quantum well - Matrix elements and selection rules
1D - InAs / In0.4Ga0.6Sb superlattice dispersion with 8-band k.p (type-II band alignment)
1D - Intersubband transitions in InGaAs/AlInAs multiple quantum well systems
2.2.5. QCLs¶
2.2.6. Transistors¶
2.2.7. Superlattices¶
2.2.8. Quantum Wells¶
k.p dispersion of an unstrained GaN QW embedded between strained AlGaN layers
Scattering times for electrons in unbiased and biased single and multiple quantum wells
1D - Optical intraband transitions in a quantum well - Intraband matrix elements and selection rules
1D - Optical interband transitions in a quantum well - Matrix elements and selection rules
2.2.9. Quantum Wires¶
2.2.10. Quantum Dots¶
2.2.11. 2DEGs¶
1D - Schrödinger-Poisson - A comparison to the tutorial file of Greg Snider’s code
3D - Depletion of electrons in a two-dimensional electron gas (2DEG)
3D - Conductance of a quantum point contact (gated two-dimensional electron gas)
Two-dimensional electron gas in an AlGaN/GaN field effect transistor
1D - C-V curve calculation for general structures (Post-processing by python)
2.2.12. Magnetic Field¶
2.2.13. Nitrides¶
k.p dispersion in bulk unstrained, compressively and tensely strained GaN (wurtzite)
k.p dispersion of an unstrained GaN QW embedded between strained AlGaN layers
1D - Interband tunneling current in a highly-doped nitride heterojunction
1D - UV LED: Quantitative evaluation of the effectiveness of superlattice structure in p-region
1D - UV LED: Quantitative evaluation of the effectiveness of EBL
Two-dimensional electron gas in an AlGaN/GaN field effect transistor
1D - Optics: Optical gain and spontaneous emission rate of strained GaN quantum well
1D - Optics: Optical gain and spontaneous emission rate of strained GaN quantum well