GUI: nextnanomat
 Tool: nextnano++
 Tool: nextnano³
 Tool: nextnano.QCL

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nextnano³ software





1D SiGe
1D doped semiconductors
1D Tight-binding band structure
1D Tight-binding graphene
1D graphene (density)
1D Poisson
1D Triangular well
1D Parabolic QW
1D Double Quantum Well
1D DOS in a QW
1D Quantum Confined Stark Effect
1D Exciton in QW
1D Schottky barrier
1D Schrödinger-Poisson
1D pn-junction
1D Transmission (NEGF)
1D inverted HEMT
1D voltage sweep
1D piezo
1D piezo [111]
1D AlAs QW crossover I
1D AlAs QW crossover II
1D QW k.p dispersion
1D deformation potentials
1D AlGaInP on GaAs
1D strain
1D strained substrate
1D wurtzite
1D bulk k.p dispersion in GaAs
1D bulk k.p dispersion in GaN
1D bulk k.p dispersion in II-VI
1D GaN/AlGaN QW dispersion
1D p-Si/SiO2/poly-Si/Gate
1D C-V curve of a MIS
1D strained silicon
1D Si inversion layer
1D strained Si MOS
1D Interband Transitions
1D QW optical absorption
1D QCL (simple)
1D Quantum Cascade Laser
1D Intraband Transitions
1D InGaAs MQWs
1D Scattering time
1D SL minibands
1D InAs/InGaSb SL (type-II)
1D InAs/GaSb BGQW (type-II)
1D full-band density bulk
1D full-band density SL
1D single-band vs. k.p
2D single-band vs. k.p
1D resistance in Si
1D nin Si resistor
1D Mobility in 2DEGs
1D Tandem solar cell
BIO-1D Gouy-Chapman
BIO-1D GaN/AlGaN electrolyte
BIO-1D Si/SiO2 electrolyte
BIO-1D Protein sensor
2D Quantum corral
2D Core-Shell nanowire
2D GaN nanowire
2D n / nin Si
2D QWR magnetic
2D T-shaped QWR
2D T-shaped strained QWR
2D Exciton in QWR
2D Landau levels
2D Fock-Darwin states
2D Fock-Darwin (ellipse)
2D coupled QWRs in magnetic field
2D The CBR method (Transmission)
3D cubic QD
3D artificial atom
3D artificial QD crystal
3D IB solar cell
3D pyramidal QD
3D hexagonal GaN QD (wurtzite)
3D QD molecule
3D exciton/biexciton in cubic QD
3D Nanocrystal
3D QD 6-band k.p
3D strain of GaN nanowire
3D CBR nanowire (Transmission)
Input file generator

nextnano3 - Tutorial

next generation 3D nano device simulator

last updated: 19-02-18

Author: Stefan Birner

General information on the simulation program and how to make it run

The geometry of the device is completely specified in the input file. This is the file that the user should edit in general. The name of this input file must be written into the second line of the file keywords.val. Apart from this modification keywords.val must not be changed.

The parameters of the materials will be read in via the database This is the place where you can change material data in case you want to.

Additional information for the keywords and the database can be found here:

Four example files are provided  (,,, in Tutorial 1 which represent typical simulation settings that are connected to each other. These files contain extensive comments to guide you through your first experience with the input system.

The output of the data is also controlled by the input file. Explanations can be found in the example files. More information on the output of the data is also contained in the section Keywords.

The program is still in the phase of development implying that there will always be aspects that could be considered additionally or described differently. If you have further comments or suggestions you are welcome to contact support [at]


Now it's time to get started...

1D Tutorials

1D BIO-nextnano³

   ISFET (Ion-Sensitive Field Effect Transistor)


2D Tutorials


3D Tutorials



Have fun!

The nextnano³ executable can be downloaded from the Download section.
Check the News section for new updates to the tutorials.


  • Please help us to improve our tutorial. Send comments to support [at]