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• 5.2.18. n-i-n Si resistor
• 5.2.12. Solution of the Poisson equation for different charge density profiles
• 5.13.3. Shubnikov-de Haas effect and subband occupation of 2DEG
• 5.14.4. Efficient method for the calculation of ballistic quantum transport - The CBR method (2D example)
• 5.16.5. Vertically coupled quantum wires in a longitudinal magnetic field
• 5.15.6. Electron wave functions of a 2D slice of a Triple Gate MOSFET
• 5.8.4. Strain effects in freestanding nitride nanostructures
• 5.11.5. Artificial quantum dot crystal - Superlattice dispersion (minibands)
• 5.15.8. Ultrathin-body DG MOSFET with 2-nm channel
• 5.15.9. Ultrathin-body DG MOSFET with 5-nm channel
• 5.2.17. I–V characteristics of n-doped GaN single layer
• 5.2.16. I–V characteristics of n-doped Si structure
• 5.15.2. Silicon MOS Capacitor
• 5.15.3. Silicon MOSFET
• 5.10.3. Ellipsoidal CdSe quantum dot
• 5.4.2. AlGaN/AlN UVC-LED with distributed-polarization layer
• 5.5.1. Harmonic Oscillator
• 5.2.9. Defining shapes in 2D and 3D simulations
• 5.8.6. Electronic band structure of holes in a GaN/AlGaN QW