4. Courses

4.1. Quantum mechanics

Orbitals of the hydrogen atom Infinite quantum well Electron States in Quantum Boxes Transmission (CBR) Harmonic Oscillator Triangular well Double quantum well

4.2. Semiconductor physics

Interpolation of 2-component alloys k.p dispersion in bulk GaAs (strained / unstrained) k.p dispersion in bulk unstrained, compressively and tensely strained GaN (wurtzite) Electronic band structures of bulk crystals with 6, 8, 14 and 30-band k.p models Piezo- and Pyroelectric charges in GaN/AlN/GaN wurtzite heterostructure Landau levels of a bulk GaAs sample in a magnetic field Electron transport in n-type silicon I–V characteristics of n-doped Si structure

4.3. Device building blocks

Schottky barrier Surface charges p-n junction in the dark p-n junction under illumination Two-dimensional electron gas in an AlGaN/GaN FET Shubnikov-de Haas effect and subband occupation of 2DEG

4.4. Semiconductor devices

4.4.1. Transistors

Silicon MOSFET GaN HEMT (soon) InGaAs/AlInAs high-electron-mobility transistor Shockley’s model of JFETs and MESFETS (planned)

4.4.2. Light emitting diodes

InGaAs Multi-quantum well IRB-LED AlGaN/AlN UVC-LED with distributed-polarization layer

4.4.3. Solar cells

GaAs solar cell Cascade solar cell (Tandem solar cell)

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Last update: 2025-10-20