$mobility-model-simba
This is one possible model for the mobility parameter µn (for electrons) and µp (for holes) that is used in the drift-diffusion model. The model is taken from the SIMBA manual (Caughey/Thomas model: [CaugheyThomas1967]).
In this model the mobility depends on three quantities and is calculated in this order:
doping density ND/NA
temperature T
electric field (perpendicular) E_|_
-> mobility-model-simba-0e with perpendicular E field dependence (makes only sense in 2D and 3D)-> mobility-model-simba-1e with perpendicular E field dependence (makes only sense in 2D and 3D)-> mobility-model-simba-2e with perpendicular E field dependence (makes only sense in 2D and 3D)-> mobility-model-simba-3e with perpendicular E field dependence (makes only sense in 2D and 3D)-> mobility-model-simba-4e with perpendicular E field dependence (makes only sense in 2D and 3D)-> mobility-model-simba-5e with perpendicular E field dependence (makes only sense in 2D and 3D)-> mobility-model-simba-0 without perpendicular E field dependence-> mobility-model-simba-1 without perpendicular E field dependence-> mobility-model-simba-2 without perpendicular E field dependence-> mobility-model-simba-3 without perpendicular E field dependence-> mobility-model-simba-4 without perpendicular E field dependence-> mobility-model-simba-5 without perpendicular E field dependenceelectric field (parallel) E||
There are parameters given in the database for electrons and holes.
Dependence on…
Parameter in formula |
Description |
Units |
Input parameter |
||
electrons |
holes |
electrons |
holes |
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µnmin |
µp,min |
minimum mobility |
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Nnref |
Npref |
reference doping density |
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µnD |
µpD |
reference mobility |
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alphan |
alphap |
exponent for Caughey/Thomas model |
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ND |
NA |
concentration of ionized donors/acceptors |
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Note: We use the nominal dopant concentration as specified in the input file and not the ionized one.
Temperature
Parameter in formula |
Description |
Units |
Input parameter |
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electrons |
holes |
electrons |
holes |
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Tn0 |
Tp0 |
reference temperature |
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gamman |
gammap |
exponent for temperature dependence |
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T |
T |
temperature |
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Parameter in formula |
Description |
Units |
Input parameter |
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electrons |
holes |
electrons |
holes |
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EnT |
EpT |
ET normal |
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Electric field (parallel electric field)
Model 0 (SIMBA): no dependence on parallel electric field
Model 1 (SIMBA):
Parameter in formula |
Description |
Units |
Input parameter |
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electrons |
holes |
electrons |
holes |
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alphan |
alphap |
alpha parameter for electric field dependence |
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betan |
betap |
beta parameter for electric field dependence |
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Parameter in formula |
Description |
Units |
Input parameter |
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electrons |
holes |
electrons |
holes |
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En0 |
Ep0 |
peak electric field E0 |
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dnE |
dpE |
temperature dependence parameter d of peak electric field |
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Tn0 |
Tp0 |
reference temperature |
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Model 2 (SIMBA):
If the exponents kappan,p are temperature dependent then this equation is called Canali model (with µp,n as the low field mobility).
Parameter in formula |
Description |
Units |
Input parameter |
||
electrons |
holes |
electrons |
holes |
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kappan |
kappap |
exponent kappa for electric field dependence |
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Parameter in formula |
Description |
Units |
Input parameter |
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electrons |
holes |
electrons |
holes |
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vn0 |
vp0 |
saturation velocity v0 |
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dnv |
dpv |
temperature dependence parameter d of saturation velocity |
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Tn0 |
Tp0 |
reference temperature |
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Model 3 (SIMBA):
Model 4 (SIMBA):
Model 5 (SIMBA):
$mobility-model-simba optional !
material-name character required !
number-of-parameters integer required !
!++++++++++++++++++++++++++++++++++++
! for binaries, e.g. GaAs
!++++++++++++++++++++++++++++++++++++
n-alpha-doping double optional !
n-N-ref-doping double optional !
n-mu-min double optional !
n-mu-doping double optional !
n-gamma-temp double optional !
n-E0-saturation double optional ! Model 1,3,5
n-T0-E-saturation double optional ! Model 1,2,3,4,5
n-temp-dependence-E double optional ! Model 1,3,5
n-alpha-E double optional ! Model 1,3,5
n-beta-E double optional ! Model 1,3,5
n-v0-saturation double optional ! Model 2,3,4,5
n-temp-dependence-v double optional ! Model 2,3,4,5
n-kappa-v double optional ! Model 2,3,4,5
n-ET-perpendicular double optional !
p-alpha-doping double optional !
p-N-ref-doping double optional !
p-mu-min double optional !
p-mu-doping double optional !
p-gamma-temp double optional !
p-E0-saturation double optional ! Model 1,3,5
p-T0-E-saturation double optional ! Model 1,2,3,4,5
p-temp-dependence-E double optional ! Model 1,3,5
p-alpha-E double optional ! Model 1,3,5
p-beta-E double optional ! Model 1,3,5
p-v0-saturation double optional ! Model 2,3,4,5
p-temp-dependence-v double optional ! Model 2,3,4,5
p-kappa-v double optional ! Model 2,3,4,5
p-ET-perpendicular double optional !
!++++++++++++++++++++++++++++++++++++
! for ternaries, e.g. Al(x)Ga(1-x)As
!++++++++++++++++++++++++++++++++++++
n-bow-alpha-doping double optional ! for ternary alloys
n-bow-N-ref-doping double optional ! for ternary alloys
n-bow-mu-min double optional ! for ternary alloys
n-bow-mu-doping double optional ! for ternary alloys
n-bow-gamma-temp double optional ! for ternary alloys
n-bow-E0-saturation double optional ! for ternary alloys
n-bow-T0-E-saturation double optional ! for ternary alloys
n-bow-temp-dependence-E double optional ! for ternary alloys
n-bow-alpha-E double optional ! for ternary alloys
n-bow-beta-E double optional ! for ternary alloys
p-bow-alpha-doping double optional ! for ternary alloys
p-bow-N-ref-doping double optional ! for ternary alloys
p-bow-mu-min double optional ! for ternary alloys
p-bow-mu-doping double optional ! for ternary alloys
p-bow-gamma-temp double optional ! for ternary alloys
p-bow-E0-saturation double optional ! for ternary alloys
p-bow-T0-E-saturation double optional ! for ternary alloys
p-bow-temp-dependence-E double optional ! for ternary alloys
p-bow-alpha-E double optional ! for ternary alloys
p-bow-beta-E double optional ! for ternary alloys
$end_mobility-model-simba optional !
material-name = Si ! or Al(x)Ga(1-x)As
Name of material to which this set of parameters applies. Name has to be listed in $default-materials.
number-of-parameters = 28
Control parameter if the number of parameters provided is the same as demanded.
The parameters are specified as shown in the tables above. There are two
sets, one for electrons (n-) and one for holes (p-).
The specifiers containing *-bow-* are for alloys, i.e. ternaries.
By default, linear interpolation is used if the bowing parameter is zero.
material-name = Si
number-of-parameters = 28
n-alpha-doping = 0.73 ! []
n-N-ref-doping = 1.072e17 ! [1/cm^3]
n-mu-min = 55.2 ! [cm^2/Vs]
n-mu-doping = 1374.0 ! [cm^2/Vs]
n-gamma-temp = 1.5 ! []
n-E0-saturation = 8.0e3 ! [V/cm]
n-T0-E-saturation = 300.0 ! [K]
n-temp-dependence-E = 0.0 ! [V/Kcm]
n-alpha-E = 2.0 ! []
n-beta-E = 0.5 ! []
n-v0-saturation = 1.03e7 ! [cm/s]
n-temp-dependence-v = 0.0 ! [cm/Ks]
n-kappa-v = 2.0 ! []
n-ET-perpendicular = 64970 ! [V/cm]
p-alpha-doping = 0.70 ! []
p-N-ref-doping = 1.606e17 ! [1/cm^3]
p-mu-min = 49.7 ! [cm^2/Vs]
p-mu-doping = 429.67 ! [cm^2/Vs]
p-gamma-temp = 2.3 ! []
p-E0-saturation = 1.95e4 ! [V/cm]
p-T0-E-saturation = 300.0 ! [K]
p-temp-dependence-E = 0.0 ! [V/Kcm]
p-alpha-E = 1.0 ! []
p-beta-E = 1.0 ! []
p-v0-saturation = 1.03e7 ! [cm/s]
p-temp-dependence-v = 0.0 ! [cm/Ks]
p-kappa-v = 1.0 ! []
p-ET-perpendicular = 1.87e4 ! [V/cm]
!++++++++++++++++++++++++++++++++++++
! for ternaries, e.g. Al(x)Ga(1-x)As
!++++++++++++++++++++++++++++++++++++
! The specifiers containing "*-bow-*" are for alloys, i.e. ternaries.
! By default, linear interpolation is used if the bowing parameter is zero.
material-name = Al(x)Ga(1-x)As
number-of-parameters = 28
n-bow-alpha-doping = 0.0 ! [cm2/Vs]
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