Journal Papers

• [AltermattI2006]

  A simulation model for the density of states and for incomplete ionization in crystalline silicon. I. Establishing the model in Si:P

  P. P. Altermatt, A. Schenk, G. Heiser

  J. Appl. Phys. 100, 1113714 (2006)

• [AltermattII2006]

  A simulation model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si:As and Si:B and usage in device simulation

  P. P. Altermatt, A. Schenk, B. Schmitthüsen, G. Heiser

  J. Appl. Phys. 100, 1113715 (2006)

• [Andrews2008]

  Doping dependence of LO-phonon depletion scheme THz quantum-cascade lasers

  A. M. Andrews, A. Benz, C. Deutsch, G. Fasching, K. Unterrainer, P. Klang, W. Schrenk, G. Strasser

  Materials Science and Engineering B 147, 152 (2008)

• [Andreev2000]

  Theory of the electronic structure of GaN/AlN hexagonal quantum dots

  A. D. Andreev, E. P. O’Reilly

  Phys. Rev. B 62, 15851 (2000)

• [Arora1982]

  Electron and hole mobilities in silicon as a function of concentration and temperature

  N.D. Arora, J.R. Hauser, D.J. Roulston

  IEEE Trans. Electron Devices 29, 292 (1982)

• [BahderPRB1990]

  Eight-band kp model of strained zinc blende crystals

  Thomas B. Bahder

  Phys. Rev. B 41, 11992 (1990)

• [BastardPRB1982]

  Exciton binding energy in quantum wells

  G. Bastard, E. E. Mendez, L. L. Chang, and L. Esaki

  Physical Review B 26, 1974 (1982)

• [BelyakovBurdov2008]

  Anomalous splitting of the hole states in silicon quantum dots with shallow acceptors

  V. A. Belyakov, V. A. Burdov

  J. Phys. Condens. Matter 20, 025213 (2008)

• [Bernevig2006]

  Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

  B. Andrei Bernevig, Taylor L. Hughes, and Shou-Cheng Zhang

  Science 314, 5806, 1757-1761 (2006)

• [Beynon1988]

  A Macintosh Hypercard stack for calculation of thermodynamically-corrected buffer recipes

  R. J. Beynon

  Comput. Appl. Biosci. 4 (4), 487 (1988)

• [BirnerPhotonikInt2008]

  Simulation of quantum cascade lasers - optimizing laser performance

  S. Birner, T. Kubis, and P. Vogl

  Photonik international 2, 60 (2008)

• [BirnerPhotonik2008]

  Simulation zur Optimierung von Quantenkaskadenlasern

  S. Birner, T. Kubis, and P. Vogl

  Photonik 1, 44 (2008)

• [BirnerCBR2009]

  Ballistic Quantum Transport using the Contact Block Reduction (CBR) Method - An introduction

  S. Birner, C. Schindler, P. Greck, M. Sabathil, and P. Vogl

  Journal of Computational Electronics 8, 267–286 (2009)

• [Brüne2010]

  Evidence for the ballistic intrinsic spin Hall effect in HgTe nanostructures

  C. Brüne, A. Roth, E. G. Novik, M. König, H. Buhmann, E. M. Hankiewicz, W. Hanke, J. Sinova, and L. W. Molenkamp

  Nature Physics 6, 448–454 (2010).

• [Burdov2002]

  Electron and hole spectra of silicon quantum dots

  V. A. Burdov

  JETP 94, 411 (2002)

• [Canali1975]

  Electron and Hole Drift Velocity Measurements in Silicon and Their Empirical Relation to Electric Field and Temperature

  C. Canali, G. Majni, R. Minder, and G. Otaviani

  IEEE Trans. Electron Dev. 22 (11), 1045 (1975)

• [CapassoIEEE1986]

  Resonant Tunneling Through Double Barriers, Perpendicular Quantum Transport Phenomena in Superlattices, and Their Device Applications

  F. Capasso, K. Mohammed, and A. Y. Cho

  IEEE Journal of Quantum Electronics QE-22, 1853 (1986)

• [CardonaPR1966]

  Energy-band structure of Germanium and Silicon: The k.p method

  M. Cardona, F. H. Pollak

  Physical Review 142 (2), 530 (1996)

• [CarloSST2003]

  Microscopic theory of nanostructured semiconductor devices: beyond the envelope=function approximation

  A. D. Carlo

  Semiconductor Science and Technology 18 (1), R1-31

• [CaugheyThomas1967]

  Carrier mobilities in silicon empirically related to doping and field

  D. Caughey, R. Thomas

  Proc. IEEE 55, 2192 (1967)

• [Chilleri2021]

  An improved empirical model for a semiconductor’s velocity-field characteristic applied to gallium arsenide

  J. Chilleri, Y. Wang, M. S. Shur, and S. K. O’Leary

  Solid State Communications 330, 114240, (2021)

• [DarwishIEEE1997]

  An Improved Electron and Hole Mobility Model for General Purpose Device Simulation

  M. N. Darwish, J. L. Lentz, M. R. Pinto, P. M. Zeitzoff, T. J. Krutsick, and H. H. Vuong

  IEEE Transactions on Electron Devices 44, 1529 (1997)

• [Dehlinger2000]

  Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures

  G. Dehlinger, L. Diehl, U. Gennser, H. Sigg, J. Faist, K. Ensslin, D. Grützmacher, E. Müller

  Science 290, 2277 (2000)

• [Eastman1980]

  DESIGN CRITERIA FOR GaAs MESFETs RELATED TO STATIONARY HIGH FIELD DOMAINS

  L. F. Eastman, S. Tiwiari, and M. S. Shur

  Solid-State Electronics 23 (4), 383 (1980)

• [Farahmand2001]

  Monte Carlo Simulation of Electron Transport in the III-Nitride Wurtzite Phase Materials System: Binaries and Ternaries

  M. Farahmand, C. Garetto, E. Bellotti, K. F. Brennan, M. Goano, E. Ghillino, G. Ghione, J. D. Albrecht, and P. P. Ruden

  IEEE Trans. Electron Dev. 48 (3), 535 (2001)

• [FerreiraBastard1989]

  Evaluation of some scattering times for electrons in unbiased and biased single- and multiple-quantum-well structures

  R. Ferreira, G. Bastard

  Physical Review B 40 (2), 1074 (1989)

• [Ferreira2006]

  Optical Properties of Ellipsoidal CdSe Quantum Dots

  W.S. Ferreira, J.S. de Sousa, J.A.K. Freire, G.A. Farias, V.N. Freire

  Brazilian Journal of Physics 36, 438 (2006)

• [FowlerNordheim1928]

  Electron emission in intense electric fields

  R. H. Fowler and L. Nordheim

  Royal Society 119 (781), 173 (1928)

• [Friedrich2005]

  Quantum-cascade lasers without injector regions operating above room temperature

  A. Friedrich, G. Böhm, M.C. Amann, G. Scarpa

  Applied Physics Letters 86, 161114 (2005)

• [GovernalePRB1998]

  Gauge-invariant grid discretization of the Schrödinger equation

  M. Governale, C. Ungarelli

  Phys. Rev. B 58 (12), 7816 (1998)

• [GreinAIP1995]

  Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes

  C. H. Grein, P. M. Young

  J. Appl. Phys. 78, 7143 (1995)

• [HalvorsenPR2000]

  Optical transitions in broken gap heterostructures

  E. Halvorsen, Y. Galperin, K. A. Chao

  Physical Review B 61, 16743 (2000)

• [Hänsch1986]

  The hotelectron problem in small semiconductor devices

  W. Hänch and M. Miura-Mattausch

  J. Appl. Phys 60, 650 (1986)

• [Hu2005]

  Resonant-phonon-assisted THz quantum-cascade lasers with metal-metal waveguides

  Q. Hu, B.S. Williams, S. Kumar, H. Callebaut, S. Kohen, J.L. Reno

  Semiconductor Science and Technology 20, S228 (2005)

• [JancuPRB1998]

  Empirical spds* tight-binding calculation for cubic semiconductors: General method and material parameters

  J.-M. Jancu, R. Scholz, F. Beltram, F. Bassani

  Physical Review B 57, 6493 (1998)

• [Kilpstein2010]

  Operator ordering and interface-band mixing in the Kane-like Hamiltonian of lattice-matched semiconductor superlattices with abrupt interfaces

  P. C. Kilpstein

  Phys. Rev. B 81, 235314 (2010)

• [Klaassen1992]

  A unified mobility model for device simulation - I. Model equations and concentration dependence

  D. B. M. Klaassen

  Solid-State Electronics 35, 953 (1992)

• [KlimeckSM2000]

  sp3s* Tight-binding parameters for transport simulations in compound semiconductors

  G. Klimeck, R. C. Bowen, T. B. Boykin, T. A. Cwik

  Superlattices and Microstructures 27 (5), 519-524 (2000)

• [KouwenhovenRPP2001]

  Few-electron quantum dots

  L.P. Kouwenhoven, D.G. Austing, and S. Tarucha

  Rep. Prog. Phys. 64, 701 (2001)

• [Lazarenkova2001]

  Miniband formation in a quantum dot crystal

  O. L. Lazarenkova and A. A. Balandin

  J. Appl. Phys. 89, 5509 (2001)

• [LenzlingerSnow1969]

  Fowler‐Nordheim Tunneling into Thermally Grown SiO_2

  M. Lenzlinger and E. H. Snow

  J. Appl. Phys. 40, 278 (1969)

• [LeverJLT2010]

  Design of Ge–SiGe Quantum-Confined Stark Effect Electroabsorption Heterostructures for CMOS Compatible Photonics

  L. Lever, Z. Ikonic, A. Valavanis, J. D. Cooper, and R. W. Kelsall

  Journal of Lightwave Technology 28, 3273 (2010)

• [_LivnehPRB2012]

  k.p model for the energy dispersions and absorption spectra of InAs/GaSb type-II superlattices

  Y. Livneh, P. C. Klipstein, O. Klin, N. Snapi, S. Grossman, A. Glozman, and E. Weiss

  Physical Review B 86, 235311 (2012)

• [LombardiIEEE1988]

  A physically based mobility model for numerical simulation of nonplanar devices

  C. Lombardi, S. Manzini, A. Saporito, and M. Vanzi

  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 7, 1164 (1988)

• [MamaluyCBR2003]

  Efficient method for the calculation of ballistic quantum transport

  D. Mamaluy, M. Sabathil, and P. Vogl

  J. Appl. Phys. 93, 4628 (2003)

• [MasettiIEEE1983]

  Modeling of Carrier Mobility Against Carrier Concentration in Arsenic-, Phosphorus- and Boron-Doped Silicon

  G. Masetti, M. Severi, and S. Solmi

  IEEE Trans. Electron Devices, Vol. ED-30 (7), 764 (1983)

• [Novik2005]

  Band structure of semimagnetic Hg(1-y)Mn(y) Te quantum wells

  E. G. Novik, A. Pfeuffer-Jeschke, T. Jungwirth, V. Latussek, C. R. Becker, G. Landwehr, H. Buhmann, and L. W. Molenkamp

  Physical Review B 72, 035321 (2005)

• [Page2001]

  300 K operation of a GaAs-based quantum-cascade laser at lambda=9 µm

  H. Page, C. Becker, A. Robertson, G. Glastre, V. Ortiz, C. Sirtori

  Appl. Phys. Lett. 78 (22), 3529 (2001)

• [ParkChuang2000]

  Comparison of zinc-blende and wurtzite GaN semiconductors with spontaneous polarization and piezoelectric field effects

  S.-H. Park, S.L. Chuang

  J. Appl. Phys. 87, 353 (2000)

• [Park2000]

  Crystal Orientation Effects on Electronic Properties of Wurtzite GaN/AlGaN Quantum Wells with Spontaneous and Piezoelectric Polarization

  S.-H. Park

  J. Appl. Phys. 39, 3478 (2000)

• [ReichPR2002]

  Tight-binding description of graphene

  S. Reich, J. Maultzsch, C. Thomsen, P. Ordejon

  Physical Review B 66, 035412 (2002)

• [RideauPRB2006]

  Strained Si, Ge, and Si(1-x)Ge(x) alloys modelled with a first-principles-optimized full-zone k.p method

  D. Rideau, M. Feraille, L. Ciampolini, M. Minondo, C. Tavernier, H. Jaouen, A. Ghetti

  Physical Review B 74 (19), 195208 (2006)

• [Rochat2005]

  Low-threshold terahertz quantum-cascade lasers

  M. Rochat, L. Ajili, H. Willenberg, J. Faist, H. Beere, G. Davies, E. Linfield, D. Ritchie

  Applied Physics Letters 81 (8), 1381 (2002)

• [SaitoS2001]

  Optical Properties and Raman Spectroscopy of Carbon Nanotubes

  M.S. Dresselhaus, G. Dresselhaus, P. Avouris (Eds.)

  Topics in Applied Physics 80, Springer (2001)

• [Sarma2002]

  Realistic tight-binding model for the electronic structure of II-VI semiconductors

  S. Sapra, N. Shanthi, D. D. Sarma

  Physical Review B 66, 205202 (2002)

• [SawamuraOME2018]

  Nearest-neighbor sp3d5s* tight-binding parameters based on the hybrid quasi-particle self-consistent GW method verified by modeling of type-II superlattices

  A. Sawamura, J. Otsuka, T. Kato, T. Kotani, S. Souma

  Optical Materials Express 8, 1569 (2018)

• [Schwierz2010]

  Reversed Anionic Hofmeister Series: The Interplay of Surface Charge and Surface Polarity

  N. Schwierz, D. Horinek, R. R. Netz

  Langmuir 26, 7370 (2010)

• [SirtoriPRB1994]

  Nonparabolicity and a sum rule associated with bound-to-bound and bound-to-continuum intersubband transitions in quantum wells

  C. Sirtori, F. Capasso, J. Faist, and S. Scandolo

  Physical Review B 50, 8663 (1994)

• [Sirtori1998]

  GaAs/AlGaAs quantum cascade lasers

  C. Sirtori, P. Kruck, S. Barbieri, P. Collot, J. Nagle, M. Beck, J. Faist, U. Oesterle

  Applied Physics Letters 73 (24), 3486 (1998)

• [TsuEsaki1973]

  Tunneling in a finite superlattice

  R. Tsu and L. Esaki

  Appl. Phys. Lett. 22, 562 (1973)

• [VurgaftmanJAP2001]

  Band parameters for III-V compound semiconductors and their alloys

  I. Vurgaftman and J. R. Meyer

  J. Appl. Phys. 89, 5815 (2001)

• [VurgaftmanJAP2003]

  Band parameters for nitrogen-containing semiconductors

  I. Vurgaftman and J. R. Meyer

  J. Appl. Phys. 94, 3675 (2003)

• [VoglJPCS1983]

  A Semi-Empricial Tight-Binding Theory of the Electronic Structure of Semiconductors

  P. Vogl, H. P. Hjalmarson, and J. D. Dow

  Journal of Physics and Chemistry of Solids 44 (5), 365 (1983)

• [ZakharovaPR2001]

  Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells

  A. Zakharova, S. T. Yen, K. A. Chao

  Physical Review B 64, 235332 (2001)