$mobility-model-minimos
The mobility model used in MINIMOS 6 is used to simulate the doping dependent mobility in Si and takes into account the scattering of the carriers by charged impurity ions which leads to a degradation of the carrier mobility (ionized impurity scattering). This model is temperature dependent and takes into account the reduced mobility due to lattice scattering (i.e. the values in the database under keyword $mobility-model-constant are the same as under this keyword). It is a model that combines lattice and impurity scattering.
The formula of Caughey and Thomas ([CaugheyThomas1967]) is used together with temperature dependent coefficients. This model is well suited for Si.
The total concentration of ionized impurities is given by ND+NA. Note: We use the nominal dopant concentration as specified in the input file and not the ionized one.
The parameter values used in this model for electrons and holes,
respectively, are taken from the PhD thesis of V. Palankovski
Simulation of Heterojunction Bipolar Transistors (TU Vienna).
(Note: The exponents n-gamma-lattice-temp, p-gamma-lattice-temp have
opposite sign in his PhD thesis.)
Parameter in formula |
Description |
Input parameter |
||
electrons |
holes |
electrons |
holes |
|
µminn(T0) |
µminp(T0) |
reference mobility parameter |
|
|
alphamn |
alphamp |
exponent |
|
|
alpham2n |
alpham2p |
exponent |
|
|
N0n |
N0p |
reference impurity parameter |
|
|
alphaNn |
alphaNp |
exponent |
|
|
Aan |
Aap |
reference exponent parameter |
|
|
alphaan |
alphaap |
exponent |
|
|
µconstn |
µconstp |
result of $mobility-model-constant |
||
ND |
NA |
concentration of ionized donors/acceptors |
||
T |
T |
lattice temperature |
||
T0 |
T0 |
temperature (300 K) |
||
$mobility-model-minimos optional !
material-name character required !
number-of-parameters integer required !
!++++++++++++++++++++++++++++++++++++
! for binaries, e.g. GaAs
!++++++++++++++++++++++++++++++++++++
n-mu-lattice-temp double optional ! [cm2/Vs] same as $mobility-model-constant
n-gamma-lattice-temp double optional ! [] same as $mobility-model-constant
! (but different sign as in MINIMOS documentation)
n-mu-min double optional ! [cm2/Vs]
n-alpha-mu-min double optional ! []
n-alpha-mu-min2 double optional ! []
n-n0 double optional ! [cm-3]
n-alpha-n0 double optional ! []
n-a-a double optional ! []
n-alpha-a-a double optional ! []
p-mu-lattice-temp double optional ! [cm2/Vs] same as $mobility-model-constant
p-gamma-lattice-temp double optional ! [] same as $mobility-model-constant
! (but different sign as in MINIMOS documentation)
p-mu-min double optional ! [cm2/Vs]
p-alpha-mu-min double optional ! []
p-alpha-mu-min2 double optional ! []
p-n0 double optional ! [cm-3]
p-alpha-n0 double optional ! []
p-a-a double optional ! []
p-alpha-a-a double optional ! []
!++++++++++++++++++++++++++++++++++++
! for ternaries, e.g. Al(x)Ga(1-x)As
!++++++++++++++++++++++++++++++++++++
n-bow-mu-lattice-temp double optional ! [cm2/Vs] for alloys
n-bow-gamma-lattice-temp double optional ! [] for alloys
n-bow-mu-min double optional ! [cm2/Vs] for alloys
n-bow-alpha-mu-min double optional ! [] for alloys
n-bow-alpha-mu-min2 double optional ! [] for alloys
n-bow-n0 double optional ! [cm-3] for alloys
n-bow-alpha-n0 double optional ! [] for alloys
n-bow-a-a double optional ! [] for alloys
n-bow-alpha-a-a double optional ! [] for alloys
!
p-bow-mu-lattice-temp double optional ! [cm2/Vs] for alloys
p-bow-gamma-lattice-temp double optional ! [] for alloys
p-bow-mu-min double optional ! [cm2/Vs] for alloys
p-bow-alpha-mu-min double optional ! [] for alloys
p-bow-alpha-mu-min2 double optional ! [] for alloys
p-bow-n0 double optional ! [cm-3] for alloys
p-bow-alpha-n0 double optional ! [] for alloys
p-bow-a-a double optional ! [] for alloys
p-bow-alpha-a-a double optional ! [] for alloys
!
$end_mobility-model-minimos optional !


