Journal papers

• [Andrews2008]

  Doping dependence of LO-phonon depletion scheme THz quantum-cascade lasers

  A. M. Andrews, A. Benz, C. Deutsch, G. Fasching, K. Unterrainer, P. Klang, W. Schrenk, and G. Strasser

  Materials Science and Engineering B 147, 152 (2008)

• [Andreev2000]

  Theory of the electronic structure of GaN/AlN hexagonal quantum dots

  A. D. Andreev and E. P. O’Reilly

  Phys. Rev. B 62, 15851 (2000)

• [Arora1982]

  Electron and hole mobilities in silicon as a function of concentration and temperature

  N.D. Arora, J.R. Hauser, and D.J. Roulston

  IEEE Trans. Electron Devices 29, 292 (1982)

• [BahderPRB1990]

  Eight-band kp model of strained zinc blende crystals

  Thomas B. Bahder

  Phys. Rev. B 41, 11992 (1990)

• [BastardPRB1982]

  Exciton binding energy in quantum wells

  G. Bastard, E. E. Mendez, L. L. Chang, and L. Esaki

  Physical Review B 26, 1974 (1982)

• [BernevigScience2006]

  Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

  A. Bernevig, T. Hughes, and S.-Ch. Zhang

  Science 314, 1757-1761 (2006)

• [BirnerPhotonikInt2008]

  Simulation of quantum cascade lasers - optimizing laser performance

  S. Birner, T. Kubis, and P. Vogl

  Photonik international 2, 60 (2008)

• [BirnerPhotonik2008]

  Simulation zur Optimierung von Quantenkaskadenlasern

  S. Birner, T. Kubis, and P. Vogl

  Photonik 1, 44 (2008)

• [BirnerAPhys2006]

  Modeling of Semiconductor Nanostructures with nextnano3

  S. Birner, S. Hackenbuchner, M. Sabathil, G. Zandler, J.A. Majewski, T. Andlauer, T. Zibold, R. Morschl, A. Trellakis, and P. Vogl

  Acta Physica Polonica A 110 (2), 111 (2006)

• [BirnerCBR2009]

  Ballistic Quantum Transport using the Contact Block Reduction (CBR) Method - An introduction

  S. Birner, C. Schindler, P. Greck, M. Sabathil, and P. and Vogl

  Journal of Computational Electronics 8, 267–286 (2009)

• [BelyakovBurdov2008]

  Anomalous splitting of the hole states in silicon quantum dots with shallow acceptors

  V. A. Belyakov and V. A. Burdov

  J. Phys. Condens. Matter 20, 025213 (2008)

• [Brews1980]

  Generalized guide for MOSFET miniaturization

  J. R. Brews, W. Fichtner, E. H. Nicollian, and S. M. Sze

  IEEE Electron Device Lett. 1, 1, (1980)

• [Burdov2002]

  Electron and hole spectra of silicon quantum dots

  V. A. Burdov

  JETP 94, 411 (2002)

• [Canali1975]

  Electron and Hole Drift Velocity Measurements in Silicon and Their Empirical Relation to Electric Field and Temperature

  C. Canali, G. Majni, R. Minder, and G. Otaviani

  IEEE Trans. Electron Dev. 22 (11), 1045 (1975)

• [CapassoIEEE1986]

  Resonant Tunneling Through Double Barriers, Perpendicular Quantum Transport Phenomena in Superlattices, and Their Device Applications

  F. Capasso, K. Mohammed, and A. Y. Cho

  IEEE Journal of Quantum Electronics QE-22, 1853 (1986)

• [CaugheyThomas1967]

  Carrier mobilities in silicon empirically related to doping and field

  D. Caughey and R. Thomas

  Proc. IEEE 55, 2192 (1967)

• [Chatzikyriakou_PhysRevResearch_2022]

  Unveiling the charge distribution of a GaAs-based nanoelectronic device: A large experimental dataset approach

  E. Chatzikyriakou, J. Wang, L. Mazzella, A. Lacerda-Santos, M. C. da S. Figueira, A. Trellakis, S. Birner, T. Grange, C. Bäuerle, and X. Waintal

  Phys. Rev. Research 4, 043163, December (2022)

• [Chilleri2021]

  An improved empirical model for a semiconductor’s velocity-field characteristic applied to gallium arsenide

  J. Chilleri, Y. Wang, M. S. Shur, and S. K. O’Leary

  Solid State Communications 330, 114240, (2021)

• [Chuang1996]

  k.p method for strained wurtizte semiconductors

  S. L. Chuang and C. S. Chang

  Physical Review B 54 (4), 2491, January (1996)

• [ChuangIEEE1996]

  Optical gain of strained wurtzite GaN quantum-well lasers

  S. L. Chuang

  IEEE Journal of Quantum Electronics 32, no. 10, pp. 1791-1800, October (1996)

• [Dehlinger2000]

  Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures

  G. Dehlinger, L. Diehl, U. Gennser, H. Sigg, J. Faist, K. Ensslin, D. Grützmacher, and E. Müller

  Science 290, 2277 (2000)

• [Dogmus2018]

  GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

  E. Dogmus, M. Zegaoui, and F. Medjdoub

  Appl. Phys. Express 11, 034102 (2018)

• [Duboz2019]

  Theoretical estimation of tunnel currents in hetero-junctions: The special case of nitride tunnel junctions

  J-Y. Duboz and B. Vinter

  J. Appl. Phys. 126, 174501 (2019)

• [DumitrasPRB2002]

  Surface photovoltage studies of InGaAs and InGaAsN quantum well structures

  Gh. Dumitras and H. Riechert

  Physical Review B 66, 205324 (2002)

• [Eastman1980]

  DESIGN CRITERIA FOR GaAs MESFETs RELATED TO STATIONARY HIGH FIELD DOMAINS

  L. F. Eastman, S. Tiwiari, and M. S. Shur

  Solid-State Electronics 23 (4), 383 (1980)

• [Edlbauer2022]

  Semiconductor-based electron flying qubits: review on recent progress accelerated by numerical modelling

  Edlbauer, H., Wang, J., Crozes, T. et al.

  EPJ Quantum Technol. 9, 21 (2022)

• [Farahmand2001]

  Monte Carlo Simulation of Electron Transport in the III-Nitride Wurtzite Phase Materials System: Binaries and Ternaries

  M. Farahmand, C. Garetto, E. Bellotti, K. F. Brennan, M. Goano, E. Ghillino, G. Ghione, J. D. Albrecht, and P. P. Ruden

  IEEE Trans. Electron Dev. 48 (3), 535 (2001)

• [FerreiraBastard1989]

  Evaluation of some scattering times for electrons in unbiased and biased single- and multiple-quantum-well structures

  R. Ferreira and G. Bastard

  Physical Review B 40 (2), 1074 (1989)

• [Ferreira2006]

  Optical Properties of Ellipsoidal CdSe Quantum Dots

  W.S. Ferreira, J.S. de Sousa, J.A.K. Freire, G.A. Farias, and V.N. Freire

  Brazilian Journal of Physics 36, 438 (2006)

• [Fischer2006]

  Tunnel-coupled one-dimensional electron systems with large subband separations

  S. F. Fischer, G. Apetrii, U. Kunze, D. Schuh, and G. Abstreiter

  Phys. Rev. B 74, 115324

• [FischettiJAP2003]

  Six-band k”p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness

  M. Fischetti, M. Solomon, M. Yang, and K. Rim

  J. Appl. Phys. 94, 1079 (2003)

• [Fischetti1998]

  Theory of electron transport in small semiconductor devices using the Pauli master equation

  M. V. Fischetti

  J. Appl. Phys. 83, 270-291 (1998)

• [FranceschiJancuBeltram1999]

  Boundary conditions in multiband k.p models: A tight-binding test

  S. De Franceschi, J.-M. Jancu, and F. Beltram

  Physical Review B 59 (15), 9691 (1999)

• [Friedrich2005]

  Quantum-cascade lasers without injector regions operating above room temperature

  A. Friedrich, G. Böhm, M.C. Amann, and G. Scarpa

  Applied Physics Letters 86, 161114 (2005)

• [GovernalePRB1998]

  Gauge-invariant grid discretization of the Schrödinger equation

  M. Governale and C. Ungarelli

  Phys. Rev. B 58 (12), 7816 (1998)

• [GreinAIP1995]

  Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes

  C. H. Grein and P. M. Young

  J. Appl. Phys. 78, 7143 (1995)

• [GunapalaJAP1991]

  Bound to continuum superlattice miniband long wavelength GaAs/AlxGa1-xAs photoconductors

  S. D. Gunapala, B. F. Levine, and Naresh Chand

  J. Appl. Phys. 70, 305-308 (1991)

• [HalvorsenPR2000]

  Optical transitions in broken gap heterostructures

  E. Halvorsen, Y. Galperin, and K. A. Chao

  Physical Review B 61, 16743 (2000)

• [Hänsch1986]

  The hotelectron problem in small semiconductor devices

  W. Hänch and M. Miura-Mattausch

  J. Appl. Phys 60, 650 (1986)

• [HirayamaJAP2005]

  Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes

  H. Hirayama

  J. Appl. Phys 97, 091101 (2005)

• [Hu2005]

  Resonant-phonon-assisted THz quantum-cascade lasers with metal-metal waveguides

  Q. Hu, B.S. Williams, S. Kumar, H. Callebaut, S. Kohen, and J.L. Reno

  Semiconductor Science and Technology 20, S228 (2005)

• [Holleitner2007]

  Dimensionally constrained D’yakonov-Perel’ spin relaxation in n-InGaAs channels: transition from 2D to 1D

  A.W. Holleitner, V. Sih, R.C. Myers, A.C. Gossard, and D.D. Awschalom

  New Journal of Physics 9, 342 (2007)

• [Jogai2003]

  Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors

  Jogai2003

  J. Appl. Phys. 93, 1631 (2003)

• [Jeon1996]

  Valence band parameters of wurtzite materials

  J.-B. Jeon, Yu.M. Sirenko, K.W. Kim, M.A. Littlejohn, and M.A. Stroscio

  Solid State Communications 99, 423 (1996)

• [Kilpstein2010]

  Operator ordering and interface-band mixing in the Kane-like Hamiltonian of lattice-matched semiconductor superlattices with abrupt interfaces

  P. C. Kilpstein

  Phys. Rev. B 81, 235314 (2010)

• [Kriekouki2022]

  Interpretation of 28 nm FD-SOI quantum dot transport data taken at 1.4 K using 3D quantum TCAD simulations

  I. Kriekouki, F. Beaudoin, P. Philippopoulos, C. Zhou, J. Camirand-Lemyre, S. Rochette, S. Mir, M.J. Barragan, M- Pioro-Ladriere, and P. Galy

  Solid-State Electronics 194 (1), 108355 (2022)

• [KouwenhovenRPP2001]

  Few-electron quantum dots

  L.P. Kouwenhoven, D.G. Austing, and S. Tarucha

  Rep. Prog. Phys. 64, 701 (2001)

• [KozodoyAPL1999]

  Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN

  P. Kozodoy, M. Hansen, S. P. DenBaars, and U. K. Mishra

  Appl. Phys. Lett. 74, 3681 (1999)

• [König2007]

  Quantum Spin Hall Insulator State in HgTe Quantum Wells

  M. König, S. Wiedmann, C. Brüne, A. Roth, H Buhmann, L. W. Molenkamp, X.-L. Qi, and S.-C. Zhang

  Science, 318, 5851 (2007)

• [König2008]

  The Quantum Spin Hall Effect: Theory and Experiment

  M. König, H Buhmann, L. W. Molenkamp, T. Hughes, C.-X. Liu, X.-L. Qi, and S.-C. Zhang

  J. Phys. Soc. Jpn., 77, 3 (2008)

• [Krishtopenko2018]

  Quantum spin Hall insulator with a large bandgap, Dirac fermions, and bilayer graphene analog

  S. S. Krishtopenko and F. Teppe

  Science Advances, 4 (2018)

• [KumagaiChuangAndoPRB1998]

  Analytical solutions of the block-diagonalized Hamiltonian for strained wurtzite semiconductors

  M. Kumagai, S. L. Chuang, and H. Ando

  Phys. Rev. B 57 15303 (1998)

• [KuoNature2005]

  Strong quantum-confined Stark effect in germanium quantum-well structures on silicon

  Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris1

  Nature 437, 7063 (2005)

• [Lazarenkova2001]

  Miniband formation in a quantum dot crystal

  O. L. Lazarenkova and A. A. Balandin

  J. Appl. Phys. 89, 5509 (2001)

• [LeverJLT2010]

  Design of Ge–SiGe Quantum-Confined Stark Effect Electroabsorption Heterostructures for CMOS Compatible Photonics

  L. Lever, Z. Ikonic, A. Valavanis, J. D. Cooper, and R. W. Kelsall

  Journal of Lightwave Technology 28, 3273 (2010)

• [LivnehPRB2014]

  Erratum: k.p model for the energy dispersions and absorption spectra of InAs/GaSb type-II superlattices [Phys. Rev. B 86, 235311 (2012)]

  Y. Livneh, P. C. Klipstein, O. Klin, N. Snapi, S. Grossman, A. Glozman, and E. Weiss

  Physical Review B 86, 235311 (2012)

• [LivnehPRB2012]

  k.p model for the energy dispersions and absorption spectra of InAs/GaSb type-II superlattices

  Y. Livneh, P. C. Klipstein, O. Klin, N. Snapi, S. Grossman, A. Glozman, and E. Weiss

  Physical Review B 86, 235311 (2012)

• [MamaluyCBR2003]

  Efficient method for the calculation of ballistic quantum transport

  D. Mamaluy, M. Sabathil, and P. Vogl

  J. Appl. Phys. 93, 4628 (2003)

• [MasettiIEEE1983]

  Modeling of Carrier Mobility Against Carrier Concentration in Arsenic-, Phosphorus- and Boron-Doped Silicon

  G. Masetti, M. Severi, and S. Solmi

  IEEE Trans. Electron Devices, Vol. ED-30 (7), 764 (1983)

• [MehnkeAPE2019]

  Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217 nm

  F. Mehnke, L. Sulmoni, M. Guttmann, T. Wernike, and M. Kneissl

  Appl. Phys. Express 12, 012008 (2019)

• [Meyer2025]

  Quantum spin Hall effect in III-V semiconductors at elevated temperatures: Advancing topological electronics

  M. Meyer, J. Baumbach, S. Krishtopenko, A. Wolf, M. Emmerling, S. Schmid, M. Kamp, B. Jouault, J.-B. Rodriguez, E. Tournie, T. Müller, R. Thomale, G. Bastard, F. Teppe, F. Hartmann, and S. Höfling

  Science Advances 11, 43 (2025)

• [Miura-Mattausch2001]

  MOSFET modeling gets physical

  M. Miura-Mattausch, H. J. Mattausch, N. D. Arora, and C. Y. Yang

  IEEE Circuits Devices Mag., 17, 6, (2001)

• [Mourokh2007]

  Vertically coupled quantum wires in a longitudinal magnetic field

  L. G. Mourokh, A. Y. Smirnov, and S. F. Fischer

  Appl. Phys. Lett. 90, 132108 (2007)

• [Novik2005]

  Band structure of semimagnetic Hg(1-y)Mn(y)Te quantum wells

  E. G. Novik, A. Pfeuffer-Jeschke, T. Jungwirth, V. Latussek, C. R. Becker, G. Landwehr, H. Buhmann, L. W. Molenkamp

  Physical Review B 72, 3 (2005)

• [Page2001]

  300 K operation of a GaAs-based quantum-cascade laser at lambda=9 µm

  H. Page, C. Becker, A. Robertson, G. Glastre, V. Ortiz, and C. Sirtori

  Appl. Phys. Lett. 78 (22), 3529 (2001)

• [ParkChuangPRB1999]

  Crystal-orientation effects on the piezoelectric field and electronic properties of strained wurtzite semiconductors

  S.-H. Park and S.-L. Chuang

  Phys. Rev. B 59, 4725 (1999)

• [ParkChuang2000]

  Comparison of zinc-blende and wurtzite GaN semiconductors with spontaneous polarization and piezoelectric field effects

  S.-H. Park and S.L. Chuang

  J. Appl. Phys. 87, 353 (2000)

• [Patra2017]

  Electrostatic built-in fields in wurtzite III-N nanostructures: Impact of growth plane on second-order piezoelectricity

  S. K. Patra and S. Schulz

  Phys. Rev. B 96, 155307 (2017)

• [Park2000]

  Crystal Orientation Effects on Electronic Properties of Wurtzite GaN/AlGaN Quantum Wells with Spontaneous and Piezoelectric Polarization

  S.-H. Park

  J. Appl. Phys. 39, 3478 (2000)

• [Povolotskyi2005]

  Strain effects in freestanding three-dimensional nitride nanostructures

  M. Povolotskyi, M. Auf der Maur, and A. Di Carlo

  Phys. Stat. Sol. (c) 2, 3891 (2005)

• [Pryor1998]

  Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations

  C. Pryor

  Physical Review B 57 (12), 7190 (1998)

• [RideauPRB2006]

  Strained Si, Ge, and Si(1-x)Ge(x) alloys modelled with a first-principles-optimized full-zone k.p method

  D. Rideau, M. Feraille, L. Ciampolini, M. Minondo, C. Tavernier, H. Jaouen, and A. Ghetti

  Physical Review B 74 (19), 195208 (2006)

• [Rochat2005]

  Low-threshold terahertz quantum-cascade lasers

  M. Rochat, L. Ajili, H. Willenberg, J. Faist, H. Beere, G. Davies, E. Linfield, and D. Ritchie

  Applied Physics Letters 81 (8), 1381 (2002)

• [Romanov2006]

  Strain-induced polarization in wurtzite III-nitride semipolar layers

  A. E. Romanov, T. J. Baker, S. Nakamura, and J. S. Speck

  Journal of Applied Physics 100, 023522 (2026)

• [Sabathil2002]

  Towards fully quantum mechanical 3D device simulation

  M. Sabathil, S. Hackenbuchner, J. A. Majewski, G. Zandler, and P. Vogl

  Journal of Computational Electronics 1, 81 (2002)

• [Scholze2000]

  Single-Electron Device Simulation

  A. Scholze, A. Schenk, and W. Fichtner

  IEEE Transactions on Electron Devices 47, 1811 (2000)

• [Schulz2015]

  Electronic Structure of Polar and Semipolar (11-22)-Oriented Nitride Dot-in-a-Well Systems

  S. Schulz and O. Marquardt

  Phys. Rev. Appl. 3, 064020 (2015)

• [SirtoriPRB1994]

  Nonparabolicity and a sum rule associated with bound-to-bound and bound-to-continuum intersubband transitions in quantum wells

  C. Sirtori, F. Capasso, J. Faist, and S. Scandolo

  Physical Review B 50, 8663 (1994)

• [Sirtori1998]

  GaAs/AlGaAs quantum cascade lasers

  C. Sirtori, P. Kruck, S. Barbieri, P. Collot, J. Nagle, M. Beck, J. Faist, and U. Oesterle

  Applied Physics Letters 73 (24), 3486 (1998)

• [SchäfflerSST1997]

  High-Mobility Si and Ge structures

  F. Schäffler

  Semiconductor Science and Technology 12, 1515 (1997)

• [SchubertAPL1996]

  Enhancement of deep acceptor activation in semiconductors by superlattice doping

  E. F. Schubert, W. Grieshaber, and I. D. Goepfert

  Appl. Phys. Lett. 69, 3737 (1996)

• [VurgaftmanJAP2001]

  Band parameters for III-V compound semiconductors and their alloys

  I. Vurgaftman and J. R. Meyer

  J. Appl. Phys. 89, 5815 (2001)

• [Wang2004]

  Quantum mechanical calculation of hole mobility in silicon inversion layers under arbitrary stress

  E. Wang, P. Matagne, L. Shifren, B. Obradovic, R. Kotlyar, S. Cea, J. He, Z. Ma, R. Nagisetty, S. Tyagi, M. Stettler, and M.D. Giles

  IEDM Technical Digest. IEEE International Electron Devices Meeting (2004)

• [ZakharovaPR2001]

  Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells

  A. Zakharova, S. T. Yen, and K. A. Chao

  Physical Review B 64, 235332 (2001)

• [ZhangXia2006]

  Optical properties of GaN wurtzite quantum wires

  X. W. Zhang and J. B. Xia

  J. Phys.: Condens. Matter 18, 3107 (2006)