Tag: #under_development

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• 5.2.17. n-i-n Si resistor
• 5.2.11. Solution of the Poisson equation for different charge density profiles
• 5.12.3. Shubnikov-de Haas effect and subband occupation of 2DEG
• 5.13.4. Efficient method for the calculation of ballistic quantum transport - The CBR method (2D example)
• 5.15.5. Vertically coupled quantum wires in a longitudinal magnetic field
• 5.14.5. Electron wave functions of a 2D slice of a Triple Gate MOSFET
• 5.6.4. Strain effects in freestanding nitride nanostructures
• 5.10.5. Artificial quantum dot crystal - Superlattice dispersion (minibands)
• 5.14.7. Ultrathin-body DG MOSFET with 2-nm channel
• 5.14.8. Ultrathin-body DG MOSFET with 5-nm channel
• 5.2.16. I–V characteristics of n-doped GaN single layer
• 5.2.15. I–V characteristics of n-doped Si structure
• 5.9.9. Electronic band structures of bulk crystals with 6, 8, 14 and 30-band k.p models
• 5.5.1. Harmonic Oscillator