References

• [AndlauerPhD2009]

  Optoelectronic and spin-related properties of semiconductor nanostructures in magnetic fields

  T. Andlauer

  Selected Topics of Semiconductor Physics and Technology (G. Abstreiter, M.-C. Amann, M. Stutzmann, and P. Vogl, eds.), Vol. 105, Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e.V., München, 157 pp. (2009)

• [BastardPRB1982]

  Exciton binding energy in quantum wells

  G. Bastard, E. E. Mendez, L. L. Chang, and L. Esaki

  Physical Review B, 26, 1974 (1982)

  DOI 10.1103/PhysRevB.26.1974

• [Beynon1988]

  A Macintosh Hypercard stack for calculation of thermodynamically-corrected buffer recipes

  R. J. Beynon

  Comput. Appl. Biosci. 4 (4), 487 (1988)

• [Beynon1996]

  Buffer solutions: The basics

  R. J. Beynon, and J. S. Easterby

  Oxford University Press (1996)

• [BirnerPhotonikInt2008]

  Simulation of quantum cascade lasers - optimizing laser performance

  S. Birner, T. Kubis, and P. Vogl

  Photonik international 2, 60 (2008)

• [BirnerPhotonik2008]

  Simulation zur Optimierung von Quantenkaskadenlasern

  S. Birner, T. Kubis, and P. Vogl

  Photonik 1, 44 (2008)

• [BirnerCBR2009]

  Ballistic Quantum Transport using the Contact Block Reduction (CBR) Method - An introduction

  S. Birner, C. Schindler, P. Greck, M. Sabathil, and P. Vogl

  Journal of Computational Electronics 8, 267–286 (2009)

  DOI 10.1007/s10825-009-0293-z

• [BirnerPhD2011]

  Modeling of semiconductor nanostructures and semiconductor–electrolyte interfaces

  S. Birner

  Selected Topics of Semiconductor Physics and Technology (G. Abstreiter, M.-C. Amann, M. Stutzmann, and P. Vogl, eds.), Vol. 135, Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e.V., München, 239 pp. (2011)

  ISBN 978-3-941650-35-0

• [CapassoIEEE1986]

  Resonant Tunneling Through Double Barriers, Perpendicular Quantum Transport Phenomena in Superlattices, and Their Device Applications

  F. Capasso, K. Mohammed, and A. Y. Cho

  IEEE Journal of Quantum Electronics QE-22, 1853 (1986)

  DOI 10.1109/JQE.1986.1073171

• [ChuangOpto1995]

  Physics of Optoelectronic Devices

  S. L. Chuang

  John Wiley & Sons, Inc., New York (1995)

• [ChuangIEEE1996]

  Optical gain of strained wurtzite GaN quantum-well lasers

  S. L. Chuang

  IEEE Journal of Quantum Electronics, vol. 32, no. 10, pp. 1791-1800, Oct. 1996

  doi: 10.1109/3.538786

• [DattaETMS1995]

  Electronic Transport in Mesoscopic Systems

  S. Datta

  Cambridge Studies in Semiconductor Physics and Microelectronic Engineering, Cambridge University Press, Cambridge (1995)

  DOI 10.1017/CBO9780511805776

• [DarwishIEEE1997]

  An Improved Electron and Hole Mobility Model for General Purpose Device Simulation

  M. N. Darwish, J. L. Lentz, M. R. Pinto, P. M. Zeitzoff, T. J. Krutsick, and H. H. Vuong

  IEEE Transactions on Electron Devices 44, 1529 (1997)

• [Duboz2019]

  Theoretical estimation of tunnel currents in hetero-junctions: The special case of nitride tunnel junctions

  J-Y. Duboz and B. Vinter

  J. Appl. Phys. 126, 174501 (2019)

• [Eissfeller2008]

  Linear Optical Response of Semiconductor Nanodevices

  T. Eißfeller

  Diploma Thesis, Technische Universität München, Germany (2008)

• [FaistQCL2013]

  Quantum Cascade Lasers

  J. Faist

  Oxford University Press (2013)

• [FathololoumiOE2012]

  Terahertz quantum cascade lasers operating up to ~200 K with optimized oscillator strength and improved injection tunneling

  S. Fathololoumi, E. Dupont, C.W.I. Chan, Z.R. Wasilewski, S.R. Laframboise, D. Ban, A. Mátyás, C. Jirauschek, Q. Hu, and H. C. Liu

  Optics Express 20, 3866 (2012)

  DOI 10.1364/OE.20.003866

• [HackenbuchnerPhD2002]

  Elektronische Struktur von Halbleiter-Nanobauelementen im thermodynamischen Nichtgleichgewicht

  S. Hackenbuchner

  Selected Topics of Semiconductor Physics and Technology (G. Abstreiter, M.-C. Amann, M. Stutzmann, and P. Vogl, eds.), Vol. 48, Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e.V., München, 213 pp. (2002)

• [GreckPhD2012]

  Efficient calculation of dissipative quantum transport properties in semiconductor nanostructures

  P. Greck

  Selected Topics of Semiconductor Physics and Technology (G. Abstreiter, M.-C. Amann, M. Stutzmann, and P. Vogl, eds.), Vol. 153,

  Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e.V., München, 149 pp. (2012)

  ISBN 978-3-941650-53-4

• [GreckOE2015]

  Efficient Method for the Calculation of Dissipative Quantum Transport in Quantum Cascade Lasers

  P. Greck, S. Birner, B. Huber, and P. Vogl

  Optics Express 23, 6587–6600 (2015)

  DOI 10.1364/OE.23.006587

• [GreckIWCE2010]

  The nonequilibrium Green’s functions method and descendants: ways to avoid and to go

  P. Greck, C. Schindler, T. Kubis, and P. Vogl

  Abstracts of 14^th International Workshop on Computational Electronics (IWCE), Pisa, Italy, 145 (2010)

  DOI 10.1109/IWCE.2010.5677996

• [HarrisonQWWD2005]

  Quantum Wells, Wires and Dots

  P. Harrison

  Theoretical and Computational Physics of Semiconductor Nanostructures, 2^nd ed., John Wiley & Sons, Ltd (2005)

  DOI 10.1017/CBO9780511805776

• [JancuPRB1998]

  Empirical spds* tight-binding calculation for cubic semiconductors: General method and material parameters

  J.-M. Jancu, R. Scholz, F. Beltram, F. Bassani

  Phys. Rev. B 57, 6493 (1998)

• [Klaassen1992]

  An Improved Electron and Hole Mobility Model for General Purpose Device Simulation - I. Model equations and concentration dependence

  D. B. M. Klaassen

  Solid-State Electronics 35, 953 (1992)

• [KubisPhD2009]

  Quantum transport in semiconductor nanostructures

  T. C. Kubis

  Selected Topics of Semiconductor Physics and Technology (G. Abstreiter, M.-C. Amann, M. Stutzmann, and P. Vogl, eds.), Vol. 114, Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e.V., München, 253 pp. (2009)

• [KubisNEGF2005]

  Self-consistent quantum transport theory of carrier capture in heterostructures

  T. Kubis, A. Trellakis, and P. Vogl

  Proceedings of the 14^th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, M. Saraniti and U. Ravaioli, eds., Chicago, USA, July 25-19, 2005, Springer Proceedings in Physics, Vol. 110, 369–372 (2005)

  DOI 10.1007/978-3-540-36588-4_84

• [LeverJLT2010]

  Design of Ge–SiGe Quantum-Confined Stark Effect Electroabsorption Heterostructures for CMOS Compatible Photonics

  L. Lever, Z. Ikonic, A. Valavanis, J. D. Cooper, and R. W. Kelsall

  Journal of Lightwave Technology 28, 3273 (2010)

• [LombardiIEEE1988]

  A physically based mobility model for numerical simulation of nonplanar devices

  C. Lombardi, S. Manzini, A. Saporito, and M. Vanzi

  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 7, 1164 (1988)

• [MamaluyCBR2003]

  Efficient method for the calculation of ballistic quantum transport

  D. Mamaluy, M. Sabathil, and P. Vogl

  J. Appl. Phys. 93, 4628 (2003)

  DOI 10.1063/1.1560567

• [SabathilPhD2005]

  Opto-electronic and quantum transport properties of semiconductor nanostructures

  M. Sabathil

  Selected Topics of Semiconductor Physics and Technology (G. Abstreiter, M.-C. Amann, M. Stutzmann, and P. Vogl, eds.), Vol. 67, Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e.V., München, 156 pp. (2005)

• [Sarma2002]

  Realistic tight-binding model for the electronic structure of II-VI semiconductors

  S. Sapra, N. Shanthi, D. D. Sarma

  Phys. Rev. B 66, 205202 (2002)

• [SirtoriPRB1994]

  Nonparabolicity and a sum rule associated with bound-to-bound and bound-to-continuum intersubband transitions in quantum wells

  C. Sirtori, F. Capasso, J. Faist, and S. Scandolo

  Physical Review B 50, 8663 (1994)

  DOI 10.1103/PhysRevB.50.8663

• [VurgaftmanJAP2001]

  Band parameters for III-V compound semiconductors and their alloys

  I. Vurgaftman and J. R. Meyer

  Journal of Applied Physics 89, 5815 (2001)

• [VurgaftmanJAP2003]

  Band parameters for nitrogen-containing semiconductors

  I. Vurgaftman and J. R. Meyer

  Journal of Applied Physics 94, 3675 (2003)

• [ZiboldPhD2007]

  Semiconductor based quantum information devices: Theory and simulations

  T. Zibold

  Selected Topics of Semiconductor Physics and Technology (G. Abstreiter, M.-C. Amann, M. Stutzmann, and P. Vogl, eds.), Vol. 87, Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e.V., München, 151 pp. (2007)

• [VoglJPCS1983]

  A Semi-Empricial Tight-Binding Theory of the Electronic Structure of Semiconductors

  P. Vogl, H. P. Hjalmarson, and J. D. Dow

  Journal of Physics and Chemistry of Solids, Vol. 44, No. 5, pp. 365-378

  doi: 10.1016/0022-3697(83)90064-1

• [CarloSST2003]

  Microscopic theory of nanostructured semiconductor devices: beyond the envelope=function approximation

  A. D. Carlo

  Semiconductor Science and Technology, 18(1), R1-31

  doi: 10.1088/0268-1242/18/1/201

• [KlimeckSM2000]

  sp3s* Tight-binding parameters for transport simulations in compound semiconductors

  G. Klimeck, R. C. Bowen, T. B. Boykin, T. A. Cwik

  Superlattices and Microstructures, Vol. 27, No. 5, pp. 519-524

  doi: 10.1006/spmi.2000.0862

• [SaitoS2001]

  Optical Properties and Raman Spectroscopy of Carbon Nanotubes

  M.S. Dresselhaus, G. Dresselhaus, P. Avouris (Eds.)

  Topics in Applied Physics, Vol. 80, Springer (2001)

  doi: 10.1007/3-540-39947-X_9

• [ReichPR2002]

  Tight-binding description of graphene

  S. Reich, J. Maultzsch, C. Thomsen, P. Ordejon

  Physical Review B 66, 035412 (2002)

  doi: 10.1103/PhysRevB.66.035412

• [PiprekE2003]

  Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation

  J. Piprek

  Elsevier (2003)

• [GreinAIP1995]

  Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes

  C. H. Grein, P. M. Young

  Journal of Applied Physics 78, 7143 (1995)

• [ZakharovaPR2001]

  Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells

  A. Zakharova, S. T. Yen, K. A. Chao

  Physical Review B 64, 235332 (2001)

• [HalvorsenPR2000]

  Optical transitions in broken gap heterostructures

  E. Halvorsen, Y. Galperin, K. A. Chao

  Physical Review B 61, 16743 (2000)

• [CardonaPR1966]

  Energy-band structure of Germanium and Silicon: The k.p method

  M. Cardona, F. H. Pollak

  Physical Review Vol. 142, No. 2, pp. 530-543 (1996)

  doi: 10.1103/PhysRev.142.530

• [RideauPRB2006]

  Strained Si, Ge, and Si(1-x)Ge(x) alloys modelled with a first-principles-optimized full-zone k.p method

  D. Rideau, M. Feraille, L. Ciampolini, M. Minondo, C. Tavernier, H. Jaouen, A. Ghetti

  Physical Review B Vol. 74, No. 19, 195208 (2006)

  doi: 10.1103/PhysRevB.74.195208