2.6. Doping

2.6.1. Activation Energies

Table 2.6.1.1 Donor levels (n-type) in units of \(eV\) relative to conduction band edge

Donor Name	Energy	Source
n-As-in-Si	0.054
n-As-in-Si	0.049	American Institute of Physics Handbook, 3rd ed., McGraw-Hill, New York (1972)
n-P-in-Si	0.045	American Institute of Physics Handbook, 3rd ed., McGraw-Hill, New York (1972)
n-Sb-in-Si	0.039
n-N-in-Si	0.045
n-As-in-Ge	0.013	American Institute of Physics Handbook, 3rd ed., McGraw-Hill, New York (1972)
n-P-in-Ge	0.012	American Institute of Physics Handbook, 3rd ed., McGraw-Hill, New York (1972)
n-N-in-SiC	0.10
n-Si-in-GaAs	0.0058
n-Si-in-AlAs	0.007	300 K, Landolt-Boernstein
n-Si-in-Al0.27Ga0.73As	0.006	Landolt-Boernstein

More parameters can be found here

Table 2.6.1.2 Acceptor levels (p-type) in units of \(eV\) relative to valence band edge

Acceptor Name	Energy	Source
p-In-in-Si	0.16
p-B-in-Si	0.045	American Institute of Physics Handbook, 3rd ed., McGraw-Hill, New York (1972)
p-Al-in-Si	0.057	American Institute of Physics Handbook, 3rd ed., McGraw-Hill, New York (1972)
p-B-in-Ge	0.010	American Institute of Physics Handbook, 3rd ed., McGraw-Hill, New York (1972)
p-Al-in-Ge	0.010	American Institute of Physics Handbook, 3rd ed., McGraw-Hill, New York (1972)
p-Al-in-SiC	0.20
p-C-in-GaAs	0.027	Landolt-Boernstein 1982

More parameters can be found here