#***************************************************************************!
#                                                                           !
# This is an input file for nextnano++ to calculate the I-V characteristics !
# of an N-Ch MOSFET device.                                                 !
#                                                                           !
# Author: Daryoush Nosraty Alamdary, nextnano GmbH (2020)                   !
# (c) nextnano GmbH                                                         !
#                                                                           !
# Documentation: https://www.nextnano.com/nextnanoplus                      !
# Support:       support@nextnano.com                                       !
#***************************************************************************!

#++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
#----------------------------------------------------------------------------
#==> Pinch-off
#==> =========
#    In order to reproduce the figure for the pinch-off,
#    we choose:
#      o V_GS = 2.0 V             (constant gate-source voltage V_GS in inversion regime)
#      o V_DS = 0.0, 0.6, 1.5 V   (bias sweep for drain-source voltage V_DS)
#
# Option A) To get V_DS = 0.6 V, we need a bias sweep of 15 steps with a step width of 0.1 V.
# Option B) In order to save CPU time, we choose only 3 steps with a step width of 0.5 V. Then we get
#           V_DS = 0.0, 0.5, 1.0, 1.5 V. The results for 0.5 V are similar to the one shown in the tutorial for 0.6 V.
#----------------------------------------------------------------------------
 $BIAS_GATE           = 2.0  # V_GS = 2.0 V  # gate voltage V_GS (DisplayUnit:V)
 $BIASSTART           = 0    # V_DS = 0.0 V  # Voltage sweep: star voltage (DisplayUnit:V)
 $BIASEND             = 1.5  # V_DS = 1.5 V  # Voltage sweep: end voltage (DisplayUnit:V) (HighLightInUserInterface)

 $BIASSWEEPSTEPS      = 3    # Option A)     # Voltage sweep: number of voltage steps (HighLightInUserInterface)
#$BIASSWEEPSTEPS      = 15   # Option B)     # Voltage sweep: number of voltage steps (HighLightInUserInterface)
#----------------------------------------------------------------------------
#++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++

#++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
 $MobilityModel       = masetti # mobility model, e.g. Minimos, constant, ... (ListOfValues:constant,minimos) (HighLightInUserInterface)
#++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++

#++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
#$COARSESPACING_INTERIOR_Y = 5  # was used in tutorial # grid spacing along y direction, in tutorial figures 5 was used (DisplayUnit:nm)(DoNotShowInUserInterface)
 $COARSESPACING_INTERIOR_Y = 15         # grid spacing along y direction, in tutorial figures 5 was used (DisplayUnit:nm)(DoNotShowInUserInterface)
 $COARSESPACING_Y     = 5               # grid spacing along y direction (DisplayUnit:nm)
#$COARSESPACING_Doping_Y = 1   # was used in tutorial # grid spacing along y direction (DisplayUnit:nm)
#$COARSESPACING_Doping_Y = 2.5          # grid spacing along y direction (DisplayUnit:nm)
 $COARSESPACING_Doping_Y = 5.0          # grid spacing along y direction (DisplayUnit:nm)
 $FINESPACING_Y       = 1               # grid spacing along y direction (DisplayUnit:nm)
 $HYPERFINESPACING_Y   = 0.1            # grid spacing along y direction (DisplayUnit:nm)
#++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
#$COARSESPACING_INTERIOR_X = 1.0   # 1.0 was used in tutorial # grid spacing along x direction, in tutorial figures 5 was used (DisplayUnit:nm)(DoNotShowInUserInterface)
 $COARSESPACING_INTERIOR_X = 5.0        # grid spacing along x direction, in tutorial figures 5 was used (DisplayUnit:nm)(DoNotShowInUserInterface)
#$COARSESPACING_X     = 1.0 # 1.0 was used in tutorial              # grid spacing along x direction (DisplayUnit:nm)
 $COARSESPACING_X     = 2.5              # grid spacing along x direction (DisplayUnit:nm)
 $FINESPACING_X       = 1               # grid spacing along x direction (DisplayUnit:nm)
#++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++

 $SourceDrainVoltage  = 0.2               # source-drain voltage V_SD (DisplayUnit:V) (HighLightInUserInterface)
 $BackGateVoltage  = -0.1                 # Backgate-Source voltage V_BS (DisplayUnit:V) (HighLightInUserInterface)
 $BIAS                = 2.0                    # Bias sweep: sweeping the gate voltage (DisplayUnit:V)

#++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++

# User Input Dimensions:

 $L_CH_Gate            =  100            # Length of the Channel / Top-gate Contact                                          (DisplayUnit:nm)
 $L_P_Region           =  90             # Length of the P+ doped Region                                                     (DisplayUnit:nm) 
 $L_OC_Offset          =  5              # Length of the Oxide Contacts Offset Region                                        (DisplayUnit:nm) 
 $L_Side_Oxide         =  40             # Length of the Side-Oxide Regions                                                  (DisplayUnit:nm) 
 $d_Rest_Cont          =  3              # The Thickness of all the contact plates other than the Gate                       (DisplayUnit:nm) 
 $d_Gate_Cont          =  5              # The Thickness of the Gate contact                                                 (DisplayUnit:nm) 
 $H_N_Sub              =  60             # The Height of the N doped bulk substrate up to the P+ doped source/drain regions  (DisplayUnit:nm) 
 $H_P_Region           =  40             # The Height of the P+ doped source/drain regions                                   (DisplayUnit:nm)    
 $d_Oxide              =  5.0            # oxide thickness                                                                   (DisplayUnit:nm) 
 $R_Curvature          =  10             # The Radius of the curvature at the bottom of the doping regions                   (DisplayUnit:nm) 

#++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++
 
# Derived scales based on input dimensions
 
 $L_Bulk_BG = $L_CH_Gate + 2*($L_P_Region + $L_Side_Oxide - $L_OC_Offset)            # Length of the MOSFET bulk/back gate, and the simulations box  (DisplayUnit:nm)
 $H_Bulk = $d_Rest_Cont + $d_Gate_Cont + $H_N_Sub + $H_P_Region + $d_Oxide           # Height of the MOSFET bulk and the simulations box          (DisplayUnit:nm)
 $L_Gate_Oxide = $L_CH_Gate + 2*$L_OC_Offset                                         # Length of the MOSFET top gate oxide   (DisplayUnit:nm)
 $L_SD_Cont = $L_P_Region - 2*$L_OC_Offset                                           # Length of the Source/Drain contacts    (DisplayUnit:nm)
 $H_Tot_Sub = $H_N_Sub  + $H_P_Region               


 $x_min                  = -$L_Bulk_BG/2                     # minimum coordinate of simulation region along x direction (DisplayUnit:nm)(DoNotShowInUserInterface)
 $x_max                  =  $L_Bulk_BG/2                     # maximum coordinate of simulation region along x direction (DisplayUnit:nm)(DoNotShowInUserInterface)
 $x_middle               =  $x_min + ($x_max - $x_min ) / 2  # middle coordinate of device along x direction (DisplayUnit:nm)(DoNotShowInUserInterface)
 $x_Gate_left            =  $x_middle - $L_CH_Gate/2         # coordinate of rightmost point of left doping region along x direction (DisplayUnit:nm)(DoNotShowInUserInterface)
 $x_Gate_right           =  $x_middle + $L_CH_Gate/2         # coordinate of leftmost point of right doping region along x direction (DisplayUnit:nm)(DoNotShowInUserInterface)
 $x_Doping_left_middle   =  $x_Gate_left  - $L_P_Region/2    # coordinate of middle point of left doping region along x direction (DisplayUnit:nm)(DoNotShowInUserInterface)
 $x_Doping_right_middle  =  $x_Gate_right + $L_P_Region/2    # coordinate of middle point of right doping region along x direction (DisplayUnit:nm)(DoNotShowInUserInterface)

 $y_min                  =  -$H_Tot_Sub - $d_Rest_Cont       # minimum coordinate of simulation region along y direction (DisplayUnit:nm)(DoNotShowInUserInterface)
 $y_max                  =  $d_Oxide + $d_Gate_Cont          # maximum coordinate of simulation region along y direction (DisplayUnit:nm)(DoNotShowInUserInterface)
 $y_middle               =  $y_min + ($y_max - $y_min ) / 2  # middle coordinate of device along y direction (DisplayUnit:nm)(DoNotShowInUserInterface)
 $y_below_middle         =  $y_min + ($y_middle - $y_min ) / 2  # coordinate of device along y direction (DisplayUnit:nm)(DoNotShowInUserInterface)
 $y_middle_doping        =  -$H_P_Region/2                      # middle coordinate of doping region along y direction (DisplayUnit:nm)(DoNotShowInUserInterface)

#------------------------------
# Definition of quantum region
#------------------------------
 $QuantumRegion_min_x    = -$L_CH_Gate/2        # minimum coordinate of quantum region along x direction (DisplayUnit:nm)(DoNotShowInUserInterface)
 $QuantumRegion_max_x    =  $L_CH_Gate/2        # maximum coordinate of quantum region along x direction (DisplayUnit:nm)(DoNotShowInUserInterface)
 $QuantumRegion_min_y    = -2*$d_Oxide          # minimum coordinate of quantum region along y direction (DisplayUnit:nm)(DoNotShowInUserInterface)
 $QuantumRegion_max_y    = 0                    # maximum coordinate of quantum region along y direction (DisplayUnit:nm)(DoNotShowInUserInterface)


 $n_DopingConcentration = 1e20            # n+ doping concentration (DisplayUnit:cm^-3) (HighLightInUserInterface)
 $p_DopingConcentration = 1e16            # p doping concentration (DisplayUnit:cm^-3) (HighLightInUserInterface)


 $Temperature         = 300               # temperature (DisplayUnit:K)

## $EnergyLevel         = 0.045             # energy level of dopants relative to 'nearest' conduction and valence band-edge, p-B-in-Si, n-P-in-Si (DisplayUnit:eV)
###$EnergyLevel         = -1000             # all dopants are ionized (DisplayUnit:eV)
 
 $QM = 0                                  # for quantum mechanical calculation set QM to 1, and for classical set it to 0 
 $CLASS = $QM - 1             


global{ 
   simulate2D{}
   
   crystal_zb{
      x_hkl = [1, 0, 0]
      y_hkl = [0, 1, 0]
   }

   substrate{
      name = "Si"
   }

   temperature = $Temperature

}

grid{
   xgrid{
      line{ pos = $x_min  spacing = $FINESPACING_X }
      line{ pos = $x_Doping_left_middle          spacing = $COARSESPACING_INTERIOR_X}
      line{ pos = $x_Gate_left                   spacing = $COARSESPACING_X}
      line{ pos = $x_middle                      spacing = $COARSESPACING_INTERIOR_X}
      line{ pos = $x_Gate_right                  spacing = $COARSESPACING_X}
      line{ pos = $x_Doping_right_middle         spacing = $COARSESPACING_INTERIOR_X}
      line{ pos = $x_max  spacing = $FINESPACING_X }
   }
   ygrid{
      line{ pos = $y_min     spacing = $FINESPACING_Y }
      line{ pos = -$H_Tot_Sub + $d_Rest_Cont     spacing = $FINESPACING_Y }
      line{ pos = -$H_Tot_Sub + 2*$d_Rest_Cont   spacing = $COARSESPACING_Y}
      line{ pos = -$H_P_Region - 5*$d_Rest_Cont  spacing = $COARSESPACING_Y}
      line{ pos = $y_below_middle                spacing = $COARSESPACING_INTERIOR_Y}
      line{ pos = $y_middle                      spacing = $COARSESPACING_INTERIOR_Y}
      line{ pos = -$H_P_Region - 1*$d_Rest_Cont  spacing = $FINESPACING_Y}
      line{ pos = -$H_P_Region                   spacing = $FINESPACING_Y }
      line{ pos = $y_middle_doping               spacing = $COARSESPACING_Doping_Y }
      line{ pos = -$d_Oxide       spacing = $FINESPACING_Y }
      line{ pos = -$d_Oxide/2     spacing = $HYPERFINESPACING_Y }
      line{ pos = $d_Oxide/2     spacing = $HYPERFINESPACING_Y }
      line{ pos = $y_max   spacing = $FINESPACING_Y }
   }
}

structure{
   output_region_index{ boxes = no } 
   output_material_index{ boxes = no }
   output_alloy_composition{ boxes = no }
   output_impurities{ boxes = no }

   output_user_index{ boxes = no }
   
   $USER_INDEX = 1

   region{
      user_index=$USER_INDEX
      rectangle{ # Simulation Box: Air
         x = [$x_min , $x_max]
         y = [-($H_Tot_Sub + $d_Rest_Cont) , $d_Oxide + $d_Gate_Cont]
      }
      binary{
         name = "Air"
      }
   }
      
   region{
      $USER_INDEX = $USER_INDEX + 1
      user_index=$USER_INDEX
      rectangle{ # Si bulk p-doped Substrate 
         x = [$x_min , $x_max]
         y = [-$H_Tot_Sub, 0]
      }
      binary{
         name = "Si"
      }
   }

   region{
      $USER_INDEX = $USER_INDEX + 1
      user_index=$USER_INDEX
      rectangle{ # SiO2 Oxide Region - Left
         x = [$x_min, $x_min + $L_Side_Oxide]
         y = [0, $d_Oxide]
      }
       binary{
         name = "SiO2"
      }
   }

   region{
      $USER_INDEX = $USER_INDEX
      user_index=$USER_INDEX
      rectangle{# SiO2 Oxide Region - Gate
         x = [-$L_Gate_Oxide/2, $L_Gate_Oxide/2]
         y = [0, $d_Oxide]
      }
      binary{
         name = "SiO2"
      }
    }

   region{
      $USER_INDEX = $USER_INDEX
      user_index=$USER_INDEX
      rectangle{ # SiO2 Oxide Region - Right
         x = [$x_max - $L_Side_Oxide, $x_max ]
         y = [0, $d_Oxide]
      }
      binary{
         name = "SiO2"
      }
   }

   region{
      $USER_INDEX = $USER_INDEX + 1
      user_index=$USER_INDEX
      rectangle{ # Back Contact
         x = [$x_min , $x_max]
         y = [-($H_Tot_Sub) , -($H_Tot_Sub + $d_Rest_Cont)]

      }
      contact { name = Back_Contact }
      binary{
         name = "Si"
      }
   }

   region{
      $USER_INDEX = $USER_INDEX
      user_index=$USER_INDEX
      rectangle{ # Source Contact
         x = [-$L_Gate_Oxide/2, -($L_Gate_Oxide/2 + $L_SD_Cont)]
         y = [0, $d_Rest_Cont]
      }
      contact { name = Source_Contact }   
      binary{
         name = "Si"
      }
   }

   region{
      $USER_INDEX = $USER_INDEX
      user_index=$USER_INDEX
      rectangle{ # Gate Contact
         x = [-$L_CH_Gate/2, $L_CH_Gate/2]
         y = [$d_Oxide, $d_Oxide + $d_Gate_Cont]
      }
      contact { name = Gate_Contact }
      binary{
         name = "SiO2"
      }
   }

   region{
      $USER_INDEX = $USER_INDEX
      user_index=$USER_INDEX
      rectangle{ # Drain Contact
         x = [$L_Gate_Oxide/2, ($L_Gate_Oxide/2 + $L_SD_Cont)]
         y = [0, $d_Rest_Cont]
      }
      contact { name = Drain_Contact }
      binary{
         name = "Si"
      }
   }

   region{ # doping of the p-type Substrate
      $USER_INDEX = $USER_INDEX + 1
      user_index=$USER_INDEX
      rectangle{
         x = [$x_min , $x_max]
         y = [-$H_Tot_Sub, 0]
      }
      doping{
         constant{
            name = "p-doping"
            conc = $p_DopingConcentration
         }
      }
   }
     
   
#---------------------- Source Region Doping which gemetrically consists of two renctangles and two circles for rounded edge doping region----------------

# First is the removal of the substrate doping:
#----------------------------- The substrate doping removal (geometrically equal to the above actual profile defintion) ---------------------
    
      $USER_INDEX = $USER_INDEX + 1

     region{ # removal 1st part Rectangle
      user_index=$USER_INDEX
      rectangle{
        x = [-$L_CH_Gate/2, -($L_CH_Gate/2 + $L_P_Region)]
        y = [-($H_P_Region - $R_Curvature), 0]

      }
      doping{
         remove{}
      }
   }

   region{ # removal 2nd part Rectangle
      user_index=$USER_INDEX
      rectangle{
        x = [-($L_CH_Gate/2 + $R_Curvature), -($L_CH_Gate/2 + $L_P_Region - $R_Curvature)]
        y = [-$H_P_Region, -($H_P_Region - $R_Curvature)]

      }
      doping{
         remove{}
      }
   }

   region{ # removal right circle
      user_index=$USER_INDEX
      circle{                          
         center{ x = -($L_CH_Gate/2 + $R_Curvature)    y = -($H_P_Region - $R_Curvature)} 
         radius = $R_Curvature
      }   
      doping{
        remove{}
      }
   }

   region{ # removal left circle
      user_index=$USER_INDEX
      circle{                          
         center{ x = -($L_CH_Gate/2 + $L_P_Region - $R_Curvature)    y = -($H_P_Region - $R_Curvature)} 
         radius = $R_Curvature
      }   
      doping{
         remove{}
      }
   }

# Secondly comes the actual doping of the region:
#---------------------- The actual doping profile defionion ---------------------------------------
   region{ # n+_Doping 1st part Rectangle
      user_index=$USER_INDEX
      rectangle{
        x = [-$L_CH_Gate/2, -($L_CH_Gate/2 + $L_P_Region)]
        y = [-($H_P_Region - $R_Curvature), 0]

      }
      doping{
         constant{
            name = "n-doping"
            conc = $n_DopingConcentration
         }
      }
   }

   region{ # n+_Doping 2nd part Rectangle
      user_index=$USER_INDEX
      rectangle{
        x = [-($L_CH_Gate/2 + $R_Curvature), -($L_CH_Gate/2 + $L_P_Region - $R_Curvature)]
        y = [-$H_P_Region, -($H_P_Region - $R_Curvature)]

      }
      doping{
         constant{
            name = "n-doping"
            conc = $n_DopingConcentration
         }
      }
   }

   region{ # n+_Doping right circle
      user_index=$USER_INDEX
      circle{                          
         center{ x = -($L_CH_Gate/2 + $R_Curvature)    y = -($H_P_Region - $R_Curvature)} 
         radius = $R_Curvature
      }   
      doping{
         constant{
            name = "n-doping"
            conc = $n_DopingConcentration
            add = no
         }
      }
   }

   region{ # n+_Doping left circle
      user_index=$USER_INDEX
      circle{                          
         center{ x = -($L_CH_Gate/2 + $L_P_Region - $R_Curvature)    y = -($H_P_Region - $R_Curvature)} 
         radius = $R_Curvature
      }   
      doping{
         constant{
            name = "n-doping"
            conc = $n_DopingConcentration 
            add = no  
         }
      }
   }


#---------------------- Drain Region Doping which gemetrically consists of two renctangles and two circles for rounded edge doping region----------------

# First is the removal of the substrate doping:
#----------------------------- The substrate doping removal (geometrically equal to the above actual profile defintion) ---------------------
    
     region{ # removal 1st part Rectangle
      user_index=$USER_INDEX
      rectangle{
        x = [$L_CH_Gate/2, ($L_CH_Gate/2 + $L_P_Region)]
        y = [-($H_P_Region - $R_Curvature), 0]

      }
      doping{
         remove{}
      }
   }

   region{ # removal 2nd part Rectangle
      user_index=$USER_INDEX
      rectangle{
        x = [($L_CH_Gate/2 + $R_Curvature), ($L_CH_Gate/2 + $L_P_Region - $R_Curvature)]
        y = [-$H_P_Region, -($H_P_Region - $R_Curvature)]

      }
      doping{
         remove{}
      }
   }
   
    region{ # removal right circle
      user_index=$USER_INDEX
      circle{                          
         center{ x = ($L_CH_Gate/2 + $R_Curvature)    y = -($H_P_Region - $R_Curvature)} 
         radius = $R_Curvature
      }   
      doping{
        remove{}
      }
   }

   region{ # removal left circle
      user_index=$USER_INDEX
      circle{                          
         center{ x = ($L_CH_Gate/2 + $L_P_Region - $R_Curvature)    y = -($H_P_Region - $R_Curvature)} 
         radius = $R_Curvature
      }   
      doping{
         remove{}
      }
   }

# Secondly comes the actual doping of the region:
#---------------------- The actual doping profile defionion ---------------------------------------
   region{ # n+_Doping 1st part Rectangle
      user_index=$USER_INDEX
      rectangle{
        x = [$L_CH_Gate/2, ($L_CH_Gate/2 + $L_P_Region)]
        y = [-($H_P_Region - $R_Curvature), 0]

      }
      doping{
         constant{
            name = "n-doping"
            conc = $n_DopingConcentration
         }
      }
   }

   region{ # n+_Doping 2nd part Rectangle
      user_index=$USER_INDEX
      rectangle{
        x = [($L_CH_Gate/2 + $R_Curvature), ($L_CH_Gate/2 + $L_P_Region - $R_Curvature)]
        y = [-$H_P_Region, -($H_P_Region - $R_Curvature)]

      }
      doping{
         constant{
            name = "n-doping"
            conc = $n_DopingConcentration
         }
      }
   }

   region{ # n+_Doping right circle
      user_index=$USER_INDEX
      circle{                          
         center{ x = ($L_CH_Gate/2 + $R_Curvature)    y = -($H_P_Region - $R_Curvature)} 
         radius = $R_Curvature
      }   
      doping{
         constant{
            name = "n-doping"
            conc = $n_DopingConcentration
            add = no  
         }
      }
   }

   region{ # n+_Doping left circle
      user_index=$USER_INDEX
      circle{                          
         center{ x = ($L_CH_Gate/2 + $L_P_Region - $R_Curvature)    y = -($H_P_Region - $R_Curvature)} 
         radius = $R_Curvature
      }   
      doping{
         constant{
            name = "n-doping"
            conc = $n_DopingConcentration
            add = no   
         }
      }
   }
   
#   region{ # Gate-Region n++_Doping ploy-Si ---- For Fermi Contact mode 
#     $USER_INDEX = $USER_INDEX + 1
#     user_index=$USER_INDEX
#      rectangle{
#        x = [-$L_CH_Gate/2, $L_CH_Gate/2]
#        y = [$d_Oxide, ($d_Oxide + $d_Gate_Cont)]
# 
#      }
#      doping{
#         constant{
#            name = "n-doping"
#            conc = 1.0e20 #cm^-3
#         }
#      }
#   }

}

impurities{
   donor{ # n-type
      name = "n-doping"
      energy = 0.054
      degeneracy = 2
   }
   acceptor{ # p-type
      name = "p-doping"
      energy = 0.045
      degeneracy = 4
   }
}

contacts{

   ohmic{
      name = Back_Contact
      bias = -0.1
   }

     ohmic{
      name = Source_Contact               
      bias = 0.0
   }

    schottky{
      name = Gate_Contact
      bias=$BIAS_GATE # sweeping the gate voltage
    # bias = [$BIASSTART, $BIASEND] 
    # steps = 61 
    # steps=$BIASSWEEPSTEPS 
      barrier = 3.95
   }

   ohmic{
      name = Drain_Contact
    #  shift = 0.40
      bias = [$BIASSTART, $BIASEND]
      steps = $BIASSWEEPSTEPS 
    # bias = $SourceDrainVoltage
   }

}

classical{
   Gamma{}
   L{}
   Delta{}
   HH{}
   LH{}
   SO{}
   output_bandedges{ averaged = yes }
   output_carrier_densities{}
   output_intrinsic_density{}
}

poisson{
   output_potential{}
   output_electric_field{}
    newton_solver{
          iterations   = 200
          search_steps = 50 
          residual     = 1e-5
    }
  
  linear_solver{                        
   #  iterations   = 1000               
      abs_accuracy = 1e-8               
     }
}

currents{
   recombination_model{
      SRH = no
      Auger = no
      radiative = no
   }
  
   mobility_model = $MobilityModel
   output_fermi_levels{}
   output_mobilities{}
   output_currents{}

   minimum_density = 1e12 # [1/cm^3]

}

quantum {
   region{
      name = "quantum_region"
      x = [$QuantumRegion_min_x, $QuantumRegion_max_x]
      y = [$QuantumRegion_min_y, $QuantumRegion_max_y]

      boundary{
         y = dirichlet
      }

      Gamma{
         num_ev = 300
      }
      L{
         num_ev = 300
      }
      Delta{
         num_ev = 300
      }     
      HH{
         num_ev = 300
      }
      LH{
         num_ev = 300
      }
      SO{
         num_ev = 300
      }
      
      output_wavefunctions{
         max_num = 9999
         all_k_points = yes
         amplitudes = no
         probabilities = yes
      }
   }
}

output{

 # format2D = VTKAscii
   format2D = AvsBinary # to save disk space

   section1D{                 # ouput a 1D section of the simulation area (1D slice)
      name = "middle_line_x_direction"              # name of section enters file name

      y = 0                              # 1D slice at y over the inversion layer
   }

   section1D{                 # ouput a 1D section of the simulation area (1D slice)
      name = "middle_line_y_direction"              # name of section enters file name

      x = 0                # 1D slice at x through the middle of the channel
   }

}

run{
     current_poisson{
        residual_fermi = 1e-3
        current_repetitions = 2
        output_log  = yes
# #if $CLASS  alpha_fermi = 0.01
 #if $CLASS  alpha_fermi = 0.1
 #if $QM     alpha_fermi = 0.1
        iterations = 5500
     }

 !IF($QM)
     quantum_current_poisson{
        residual_fermi = 1e-3
        current_repetitions = 2
        output_log  = yes
        alpha_fermi = 0.1
        iterations = 5500
     }
 !ENDIF
}