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SIMBA mobility model

More documentation on the SIMBA mobility model ==> nextnano³ documentation

binary_zb {
 name    = Si                                     # material name, e.g. Si, GaAs, InP, ...

 ...

 mobility_simba{                                  # The reference temperature T₀ is 300 K.
   electrons{

   # Doping dependence
     alphaN     = 0.73                            # exponent for Caughey/Thomas model []
     Nref       = 1.072e17                        # reference doping density [1/cm^3]
     mumin      = 55.2                            # minimum mobility [cm2/Vs]
     muN        = 1374.0                          # reference mobility [cm2/Vs]

   # Temperature dependence
     gammaT     = 1.5                             # exponent for temperature dependence []

   # Electric field dependence (parallel)
     Esat0      = 8.0e3                           # peak electric field E₀ [V/cm]
     Esatd      = 0.0                             # temperature dependence parameter d of peak electric field [V/Kcm]
     alphaE     = 2.0                             # alpha parameter for electric field dependence []
     betaE      = 0.5                             # beta parameter for electric field dependence []

   # Temperature dependence of saturation velocity
     vsat0      = 1.03e7                          # saturation velocity v₀ [cm/s]
     vsatd      = 0.0                             # temperature dependence parameter d of saturation velocity [cm/Ks]
     kappa      = 2.0                             # exponent kappa for electric field dependence []

   # Electric field dependence (perpendicular)
     ETnormal   = 64970                           # perpendicular electric field E_T [V/cm]
   }
   holes{
     (same es for electrons{} but different numercial values, obviously)
   }
 }
}