# $Auger-recombination¶ More information on the Physics: Auger recombination processes in semiconductor heterostructures For devices with an extremely high carrier concentration the Auger process is the dominant recombination channel. The process involves three particles and therefore scales with the third power of the carrier densities. The phonon-assisted Auger recombination rate, which plays an important role especially at high carrier injection, respectively high doping levels, will be modeled in the program by the following equation: $$R_{\text {Aug}} = ( C_{\text{n}} n + C_{\text{p}} p ) ( n p - n_{\text{i}}^2 )$$ where $$n$$ is the electron density, $$p$$ is the hole density and $$n_{\text{i}}$$ is the intrinsic density. $Auger-recombination                           optional
material-name                   character     required
number-of-parameters            integer       required
n-C                             double        optional
p-C                             double        optional
n-bow-C                         double        optional
p-bow-C                         double        optional
$end_Auger-recombination optional  Explanation of specifiers. material-name type character presence required value e.g. GaAs Name of material to which this set of parameters applies. Name has to be listed in$default-materials.

number-of-parameters
type

integer

presence

required

value

e.g. 2

Control parameter if the number of parameters provided is the same as demanded.

There are two sets of parameters, one for electrons (n) and one for holes (p).

n-C
type

double

presence

required

value

e.g. 1.0e-30

unit

[cm^6/s]

The $$C_{\text{n}}$$ parameter for electrons as specified in the equation above. The order of magnitude is around $$10^{-30}$$ [cm^6/s].

n-bow-C
type

double

presence

optional

value

e.g. 0.0

unit

[cm^6/s]

For ternary alloys there are also bowing parameters possible. n-bow-C = 0.0 means zero bowing, i.e. linear interpolation is used.

p-C
unit

[cm^6/s]

Same as n-C but for holes.

p-bow-C
unit

[cm^6/s]

Same as n-bow-C but for holes.

Example

!--------------------------------------------!
$Auger-recombination ! ! material-name = Si ! number-of-parameters = 2 ! n-C = 2.8e-31 ! [cm^6/s] p-C = 9.9e-31 ! [cm^6/s] ! material-name = GaAs ! number-of-parameters = 2 ! n-C = 1.0e-30 ! [cm^6/s] p-C = 1.0e-30 ! [cm^6/s] ! material-name = Al(x)Ga(1-x)As ! number-of-parameters = 2 ! n-bow-C = 0.0 ! [cm^6/s] p-bow-C = 0.0 ! [cm^6/s] !$end_Auger-recombination                     !
!--------------------------------------------!


There is also a keywords section in the input file for \$Auger-recombination which you can use to overwrite default material parameters.