nnp:1d_ingaas_laser_diode
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nnp:1d_ingaas_laser_diode [2020/03/12 09:54] takuma.sato [Results] |
nnp:1d_ingaas_laser_diode [2024/01/03 15:17] stefan.birner removed |
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| ===== 1D InGaAs Multi-quantum well laser diode ===== | ===== 1D InGaAs Multi-quantum well laser diode ===== | ||
| Author: Takuma Sato, nextnano GmbH | Author: Takuma Sato, nextnano GmbH | ||
| + | |||
| + | **A newer version of this tutorial can be found here: | ||
| + | [[https://www.nextnano.com/manual/nextnanoplus_tutorials/1D/laser_diode.html|https://www.nextnano.com/manual/nextnanoplus_tutorials/1D/laser_diode.html]] | ||
| + | ** | ||
| In this tutorial, we simulate optical emission of a 1D InGaAs multi-quantum well laser diode grown on InP substrate. The blue region is the separate confinement heterostructure (SCH), which forms an optical waveguide in the transverse direction to confine the emitted light (red arrow). The multi-quantum wells and SCH are clad by InP on both sides. A voltage bias is applied to the gray edges. | In this tutorial, we simulate optical emission of a 1D InGaAs multi-quantum well laser diode grown on InP substrate. The blue region is the separate confinement heterostructure (SCH), which forms an optical waveguide in the transverse direction to confine the emitted light (red arrow). The multi-quantum wells and SCH are clad by InP on both sides. A voltage bias is applied to the gray edges. | ||
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| **Radiative recombination** describes the recombination of electron-hole pairs at a position $\mathbf{x}$ by emitting a photon and is given by | **Radiative recombination** describes the recombination of electron-hole pairs at a position $\mathbf{x}$ by emitting a photon and is given by | ||
| $$ | $$ | ||
| - | R_{\mathrm{rad}}(\mathbf{x}) = C\left[n(\mathbf{x}) p(\mathbf{x}) – n_i^2\right], | + | R_{\mathrm{rad}}(\mathbf{x}) = C n(\mathbf{x}) p(\mathbf{x}), |
| $$ | $$ | ||
| - | where $n_i$ is the intrinsic density of the charge carriers. $C$ is a material dependent constant given in the database and has the unit of cm$^3$/s. $R_{\mathrm{rad}}(\mathbf{x})$ is written in ''emitted_photon_density.dat''. | + | where $C$ is a material dependent constant given in the database and has the unit of cm$^3$/s. |
| Since the radiative recombination process involves no phonons, this transition is vertical and therefore this contribution is only relevant for semiconductors with a direct band gap such as GaAs. | Since the radiative recombination process involves no phonons, this transition is vertical and therefore this contribution is only relevant for semiconductors with a direct band gap such as GaAs. | ||
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